D1008UK FET Datasheet

D1008UK Datasheet, PDF, Equivalent


Part Number

D1008UK

Description

METAL GATE RF SILICON FET

Manufacture

Seme LAB

Total Page 4 Pages
Datasheet
Download D1008UK Datasheet


D1008UK
TetraFET
D1008UK
MECHANICAL DATA
B
(2 pls)
E
A
C2
1
3
54
G (4 pls)
F
K
D
PIN 1
PIN 3
PIN 5
HJ
I
DK
SOURCE (COMMON) PIN 2
DRAIN 2
GATE 1
PIN 4
MN
DRAIN 1
GATE 2
DIM mm
A 6.45
B 1.65R
C 45°
D 16.51
E 6.47
F 18.41
G 1.52
H 4.82
I 24.76
J 1.52
K 0.81R
M 0.13
N 2.16
Tol. Inches Tol.
0.13 0.254 0.005
0.13 0.065R 0.005
5° 45° 5°
0.76 0.650 0.03
0.13 0.255 0.005
0.13 0.725 0.005
0.13 0.060 0.005
0.25 0.190 0.010
0.13 0.975 0.005
0.13 0.060 0.005
0.13 0.032R 0.005
0.02 0.005 0.001
0.13 0.085 0.005
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
80W – 28V – 500MHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
175W
BVDSS
Drain – Source Breakdown Voltage *
70V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
10A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
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D1008UK
D1008UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Drain–Source
BVDSS Breakdown Voltage
PER SIDE
VGS = 0
ID = 100mA
70
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS Gate Leakage Current
VGS(th) Gate Threshold Voltage *
gfs Forward Transconductance *
GPS
η
Common Source Power Gain
Drain Efficiency
VSWR Load Mismatch Tolerance
VGS = 20V
VDS = 0
ID = 10mA
VDS = VGS
VDS = 10V
ID = 2A
TOTAL DEVICE
PO = 80W
VDS = 28V
IDQ = 0.4A
f = 400MHz
1
1.6
13
50
20:1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 28V
VDS = 28V
VDS = 28V
PER SIDE
VGS = –5V
VGS = 0
VGS = 0
f = 1MHz
f = 1MHz
f = 1MHz
Typ.
Max. Unit
V
2 mA
1 µA
7V
S
dB
%
120 pF
60 pF
5 pF
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.0°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
9/99


Features TetraFET D1008UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI -PURPOSE SILICON DMOS RF FET 80W – 28 V – 500MHz PUSH–PULL FEATURES • S IMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIM PLE BIAS CIRCUITS • LOW NOISE DK PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DR AIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 T ol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0 .25 0.13 0.13 0.13 0.02 0.13 Inches 0.2 54 0.065R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 To l. 0.005 0.005 5° 0.03 0.005 0.005 0.0 05 0.010 0.005 0.005 0.005 0.001 0.005 PIN 4 DRAIN 1 GATE 2 • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • HF/VHF /UHF COMMUNICATIONS from 1 MHz to 500 M Hz ABSOLUTE MAXIMUM RATINGS (Tcase = 2 5°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 .
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