2SJ552(L),2SJ552(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-651B (Z) 3rd. Edition Jun 1998 Features
Low on-resistance R DS(on) = 0.042 Ω typ. Low drive current. 4V gate drive devices. High speed switching.
Outline
LDPAK
4 D 1 G 1 4
2
3
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SJ552(L),2SJ552(S)
Absolute Maximum Ratings...
