Silicon FET. 2SK1740 Datasheet

2SK1740 Datasheet PDF, Equivalent


Part Number

2SK1740

Description

N-Channel Junction Silicon FET

Manufacture

Sanyo Semicon Device

Total Page 5 Pages
PDF Download
Download 2SK1740 Datasheet PDF


2SK1740 Datasheet
Ordering number:EN4112
N-Channel Junction Silicon FET
2SK1740
HF amplifiers low frequency amplifiers
analog switches
Features
· Adoption of FBET process.
· Largeyfs.
· Small Ciss.
· Small-sized package permitting 2SK1740-applied
sets to be made small and slim.
Package Dimensions
unit:mm
2050A
[2SK1740]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
VDSX
VGDS
IG
ID
PD
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–20V, VDS=0V
Cutoff Voltage
VGS(off) VDS=10V, ID=100µA
Zero-Gate Voltage Drain Current
IDSS* VDS=10V, VGS=0V
Forward Transfer Admittance
| yfs |1
| yfs |2
VDS=10V, ID=10mA, f=1kHz
VDS=10V, VGS=0V, f=1kHz
* : Pulse Test Pulse Width 2ms
* : The 2SK1740 is classified by IDSS as follows (unit : mA) :
40 3 52 48 4 63 57 5 75
Marking : IJ
IDSS rank : 3, 4, 5
1 : Source
2 : Drain
3 : Gate
SANYO : CP
Ratings
40
–40
10
75
250
150
–55 to +150
Unit
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ max
Unit
–40 V
–1.0 nA
–2.0 –3.0 –5.0 V
4075mA
10 15
mS
22 30
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62199TH (KT)/N1593TH (KOTO) 8-7275 No.4112–1/5

2SK1740 Datasheet
Continued from preceding page.
Parameter
Input Capacitance
Reverse Transfer Capacitance
Noise Figure
Static Drain-to-Source on State Resistance
2SK1740
Symbol
Conditions
Ciss
Crss
NF
RDS(on)
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, Rg=1k, ID=1mA, f=1kHz
ID=10mA, VGS=0
Ratings
min typ max
11
2.5
1.5
30
Unit
pF
pF
dB
No.4112–2/5


Features Datasheet pdf Ordering number:EN4112 N-Channel Juncti on Silicon FET 2SK1740 HF amplifiers lo w frequency amplifiers analog switches Features · Adoption of FBET process. · Largeyfs. · Small Ciss. · Sm all-sized package permitting 2SK1740-ap plied sets to be made small and slim. Package Dimensions unit:mm 2050A [2SK17 40] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specificati ons Absolute Maximum Ratings at Ta = 2 5˚C Parameter Symbol Drain-to-Sourc e Voltage Gate-to-Drain Voltage Gate Cu rrent Drain Current Allowable Power Dis sipation Junction Temperature Storage T emperature VDSX VGDS IG ID PD Tj Tstg Electrical Characteristics at Ta = 25 C Conditions Parameter Symbol Cond itions Gate-to-Drain Breakdown Voltage V(BR)GDS IG=–10µA, VDS=0 Gate-to- Source Leakage Current IGSS VGS=–20V , VDS=0V Cutoff Voltage VGS(off) VDS= 10V, ID=100µA Zero-Gate Voltage Drain Current IDSS* VDS=10V, VGS=0V Forwar d Transfer Admittance | yfs |1 | yfs |2 VDS=10V, ID=10mA, f=1kHz VDS=10V, VGS.
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