2SK2586
Silicon N-Channel MOS FET
ADE-208-358 C 4th. Edition
Application
High speed power switching
Features
Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK2586
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to sou...
