Part Number |
2SK2700 |
Manufacturers |
Toshiba Semiconductor |
Logo |
|
Description |
N-Channel MOSFET |
Datasheet |
2SK2700 Datasheet (PDF) |
2SK2700
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII)
2SK2700
Chopper Regulator, DC–DC Converter and Motor Drive Applications
z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 3.7 Ω (typ.) Unit: mm
: |Yfs| = 2.6 S (typ.) : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Gate–source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 3 9 40 295 3
http://www.DataSheet4U.net/
Unit V V V A A W mJ A mJ °C °C
Pulse (Note 1)
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
― SC-67 2-10R1B
4 150 −55 to 150
Weight: 1.9 g (typ.)
Note: Using continuously unde.