Part Number |
2SK2751 |
Manufacturers |
Panasonic Semiconductor |
Logo |
|
Description |
Silicon N-Channel Junction FET |
Datasheet |
2SK2751 Datasheet (PDF) |
Silicon Junction FETs (Small Signal)
2SK2751
Silicon N-Channel Junction FET
For impedance conversion in low frequency For pyroelectric sensor
0.65±0.15
+0.2
unit: mm
0.65±0.15
2.8 –0.3
1.5 –0.05
+0.25
s Features
q Low noise-figure (NF) q High gate to drain voltage VGDO q Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
0.95 2.9 –0.05
1
1.9±0.2
+0.2
0.95
3
0.4 –0.05
+0.1
2
1.45
+0.2 1.1 –0.1
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature
Symbol VGDS ID IG PD Tch Tstg
Ratings −40 10 2 200 150 −55 to +150
Unit V mA mA mW °C °C
1: Source 2: Drain 3: Gate
JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin)
Marking Symbol: HS
s Electrical Characteristics (Ta = 25 ± 3°C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Symbol IDSS.