Part Number |
2SK2775 |
Manufacturers |
Sanyo Semicon Device |
Logo |
|
Description |
N-Channel Silicon MOSFET |
Datasheet |
2SK2775 Datasheet (PDF) |
Ordering number:ENN6392
N-Channel Silicon MOSFET
2SK2775
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.
Package Dimensions
unit:mm 2128
[2SK2775]
8.2 7.8 6.2 3
0.4 0.2
0.6
4.2
1.2
8.4 10.0
1.0 2.54
1
2
1.0 2.54
0.3 0.6
5.08 10.0 6.0
6.2 5.2
7.8
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings
1 : Gate 2 : Source 3 : Drain SANYO : ZP (Bottom view)
2.5
Unit 100 ±20 25 100 40 150 V V A A W ˚C ˚C
–55 to +150
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltag.