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Part Number 2SK2775
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet 2SK2775 Datasheet2SK2775 Datasheet (PDF)

  2SK2775   2SK2775
Ordering number:ENN6392 N-Channel Silicon MOSFET 2SK2775 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package. Package Dimensions unit:mm 2128 [2SK2775] 8.2 7.8 6.2 3 0.4 0.2 0.6 4.2 1.2 8.4 10.0 1.0 2.54 1 2 1.0 2.54 0.3 0.6 5.08 10.0 6.0 6.2 5.2 7.8 0.7 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings 1 : Gate 2 : Source 3 : Drain SANYO : ZP (Bottom view) 2.5 Unit 100 ±20 25 100 40 150 V V A A W ˚C ˚C –55 to +150 Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltag.



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