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Part Number 2SK2807-01S
Manufacturers Fuji Electric
Logo Fuji Electric
Description N-channel MOS-FET
Datasheet 2SK2807-01S Datasheet2SK2807-01S Datasheet (PDF)

  2SK2807-01S   2SK2807-01S
2SK2807-01L,S FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 30V 20mΩ ±35A 30W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 30 ±35 ±140 ±16 129.3 30 150 -55 ~ +150 L=0,070mH, Vcc=12V > Equivalent Circuit Unit V A A V mJ W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward .



2SK2807-01L 2SK2807-01S 2SK2808


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