3SK239A
GaAs Dual Gate MES FET
Application
UHF RF amplifier
Features
Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) Capable of low voltage operation
Outline
3SK239A
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel t...
