MOS FET FKV660S
Absolute Maximum Ratings (Ta=25ºC)
Symbol Ratings VDSS 60 VGSS +20, –10 ± 60 ID ± 180 ID(pulse) PD 60(Tc=25ºC) Tch 150 Tstg –40 to +150 PW 100µs, duty 1% Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR)DSS IGSS IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD Test Conditions ID=100 µA, VGS=0V VGS =+20V VGS =–1...
