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FDD2612

Fairchild Semiconductor
Part Number FDD2612
Manufacturer Fairchild Semiconductor
Description 200V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD2612 August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been desi...
Datasheet PDF File FDD2612 PDF File

FDD2612
FDD2612

Overview
FDD2612 August 2001 FDD2612 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features • 4.
9 A, 200 V.
RDS(ON) = 720 mΩ @ VGS = 10 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability • Fast switching speed • Low gate charge (8nC typical) Applications • DC/DC converter D D G G S TO-252 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Vol...


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