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FDG328P

P-Channel 2.5V Specified PowerTrench MOSFET

Description

FDG328P October 2000 FDG328P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V – 12V). Features –1....

Fairchild Semiconductor

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