41A/ 33m. FDP3672 Datasheet

FDP3672 Datasheet PDF, Equivalent


Part Number

FDP3672

Description

N-Channel PowerTrench MOSFET 105V/ 41A/ 33m

Manufacture

Fairchild Semiconductor

Total Page 10 Pages
PDF Download
Download FDP3672 Datasheet


FDP3672 Datasheet
September 2003
FDP3672
N-Channel PowerTrench® MOSFET
105V, 41A, 33m
Features
• rDS(ON) = 25m(Typ.), VGS = 10V, ID = 41A
• Qg(tot) = 28nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82760
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 62oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 (Note 2)
D
G
S
Ratings
105
±20
41
31
5.9
Figure 4
48
135
0.9
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
1.11
62
oC/W
oC/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDP3672 Rev. A3

FDP3672 Datasheet
Package Marking and Ordering Information
Device Marking
FDP3672
Device
FDP3672
Package
TO-220AB
Reel Size
Tube
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 80V
VGS = 0V
TC= 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 41A, VGS = 10V
ID = 21A, VGS = 6V,
ID = 41A, VGS = 10V,
TC = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 50V
ID = 41A
Ig = 1.0mA
Resistive Switching Characteristics (VGS = 10V)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
VDD = 50V, ID = 41A
VGS = 10V, RGS = 11.0
Drain-Source Diode Characteristics
VSD Source to Drain Diode Voltage
trr
QRR
Reverse Recovery Time
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 0.11mH, IAS = 30A.
2: Pulse Width = 100s
ISD = 41A
ISD = 21A
ISD = 41A, dISD/dt =100A/µs
ISD = 41A, dISD/dt =100A/µs
Min
105
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ Max Units
- -V
-1
µA
- 250
- ±100 nA
-
0.025
0.031
4
0.033
0.055
0.063 0.070
V
1670
240
55
28
3.9
12
8.0
6.5
-
-
-
37
5
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
- 90 ns
12 - ns
48 - ns
24 - ns
27 - ns
- 77 ns
- 1.25 V
- 1.0 V
- 39 ns
- 42 nC
©2003 Fairchild Semiconductor Corporation
FDP3672 Rev. A3


Features Datasheet pdf FDP3672 September 2003 FDP3672 N-Chann el PowerTrench® MOSFET 105V, 41A, 33m Features • r DS(ON) = 25mΩ (Typ. ), VGS = 10V, ID = 41A • Qg(tot) = 28 nC (Typ.), VGS = 10V • Low Miller Cha rge • Low QRR Body Diode • Optimize d efficiency at high frequencies • UI S Capability (Single Pulse and Repetiti ve Pulse) • Qualified to AEC Q101 Ap plications • DC/DC converters and Off -Line UPS • Distributed Power Archite ctures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Sy nchronous Rectifier • Direct Injectio n / Diesel Injection Systems • 42V Au tomotive Load Control • Electronic Va lve Train Systems Formerly development al type 82760 D DRAIN (FLANGE) SOURCE DRAIN GATE TO-220AB FDP SERIES G S M OSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS Parame ter Drain to Source Voltage Gate to Sou rce Voltage Drain Current Continuous (T C = 25oC, VGS = 10V) ID Continuous (TC = 100oC, VGS = 10V) Continuous (Tamb = 25oC, VGS = 10V, R θJA = 62oC/W) Pulsed E AS PD TJ, TSTG S.
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