PowerTrench MOSFET. FDR6678A Datasheet

FDR6678A Datasheet PDF, Equivalent


Part Number

FDR6678A

Description

30V N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDR6678A Datasheet


FDR6678A Datasheet
April 2000
PRELIMINARY
FDR6678A
30V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“high side” synchronous rectifier operation, providing an
extremely low RDS(ON) and fast switching in a small
package.
Applications
DC/DC converter
Features
7.5 A, 30 V.
RDS(ON) = 24 m@ VGS = 4.5V
RDS(ON) = 20 m@ VGS = 10 V
High performance trench technology for extremely
low RDS(ON)
Fast switching, low gate charge
High power and current in a smaller footprint than
SO-8
S
D
D
S
G
D
SuperSOTTM -8
D
D
54
63
72
81
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.6678A
FDR6678A
13’’
Ratings
30
±12
7.5
40
1.8
1.0
0.9
-55 to +150
70
20
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDR6678A Rev B(W)

FDR6678A Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
===TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 12 V, VDS = 0 V
VGS = –12 V , VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
===TJ
Gate Threshold Voltage
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 4.5 V, ID = 6.8 A
VGS = 4.5 V, ID = 6.8 A TJ =125°C
VGS = 10 V, ID = 7.5 A,
VGS = 4.5 V, VDS = 5 V
VDS = 10 V,
ID = 7.5 A
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
VDS = 15 V, ID = 7.5 A,
VGS = 4.5 V
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.5 A (Note 2)
30 V
22 mV/°C
1
100
–100
µA
nA
nA
0.8 1.4
–4
20
29
18
40
30
2V
mV/°C
24
40
m
20
A
S
1460
227
96
pF
pF
pF
8 16
9 18
35 58
7 14
13 21
3.6
3.6
ns
ns
ns
ns
nC
nC
nC
1.5
0.7 1.2
A
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 70°/W when
mounted on a 1in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 125°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
FDR6678A Rev B(W)


Features Datasheet pdf FDR6678A April 2000 PRELIMINARY FDR667 8A 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSF ET has been designed specifically to im prove the overall efficiency of DC/DC c onverters using either synchronous or c onventional switching PWM controllers. It has been optimized for “high side synchronous rectifier operation, pro viding an extremely low RDS(ON) and fas t switching in a small package. Featur es • 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5V RDS(ON) = 20 mΩ @ VGS = 1 0 V • High performance trench techno logy for extremely low RDS(ON) • Fast switching, low gate charge • High po wer and current in a smaller footprint than SO-8 Applications • DC/DC conve rter D S D S 5 6 4 3 2 1 SuperSOT - 8 TM D D D G 7 8 Absolute Maximu m Ratings Symbol VDSS VGSS ID PD Drain- Source Voltage Gate-Source Voltage Drai n Current – Continuous – Pulsed TA =25oC unless otherwise noted Parameter Ratings 30 ±12 (Note 1a) Units V V A W 7.5 40 1.8 1.0 0.9 -55 to +150 Power Dissip.
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