PowerTrench MOSFET. FDS2170N7 Datasheet

FDS2170N7 Datasheet PDF, Equivalent


Part Number

FDS2170N7

Description

200V N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 6 Pages
PDF Download
Download FDS2170N7 Datasheet PDF


FDS2170N7 Datasheet
May 2003
FDS2170N7
200V N-Channel PowerTrenchMOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
Synchronous rectifier
DC/DC converter
Features
3.0 A, 200 V. RDS(ON) = 128 m@ VGS = 10 V
High performance trench technology for extremely
low RDS(ON)
High power and current handling capability
Fast switching, low gate charge (26nC typical)
FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5 Drain Contact
6
7
8
4
3
2
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS2170N7
FDS2170N7
13’’
Ratings
200
± 20
3.0
20
3.0
1.8
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2003 Fairchild Semiconductor Corporation
FDS2170N7 Rev C3(W)

FDS2170N7 Datasheet
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings
WDSS
Drain-Source Avalanche Energy
IAR Drain-Source Avalanche Current
Single Pulse, VDD = 100 V, ID=3.0 A
370 mJ
3A
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 160 V,
VGS = 20 V,
VGS = –20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
200 V
231 mV/°C
1
100
–100
µA
nA
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 3.0 A
VGS = 10 V, ID = 3.0 A,TJ = 125°C
VDS = 10 V, ID = 3.0 A
2 4 4.5 V
–10
107
213
15
128
268
mV/°C
m
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
VDS = 100 V, V GS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
1292
72
24
1.5
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 100 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 100 V, ID = 3.0 A,
VGS = 10 V
12 22 ns
5 10 ns
30 48 ns
23 36 ns
26 36 nC
7 nC
10 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 2.5 A (Note 2)
2.5
0.76 1.2
A
V
trr
Diode Reverse Recovery Time
IF = 3.0A
Qrr
Diode Reverse Recovery Charge diF/dt = 100 A/µs
(Note 2)
95 nS
552 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 40°C/W when
mounted on a 1in2 pad
of 2 oz copper
b) 85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS2170N7 Rev C3(W)


Features Datasheet pdf FDS2170N7 May 2003 FDS2170N7 200V N-Ch annel PowerTrench MOSFET General Des cription This N-Channel MOSFET has been designed specifically to improve the o verall efficiency of DC/DC converters u sing either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchrono us rectifier operation, providing an ex tremely low RDS(ON) in a small package. Features • 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V • High performa nce trench technology for extremely low RDS(ON) • High power and current han dling capability • Fast switching, lo w gate charge (26nC typical) • FLMP S O-8 package: Enhanced thermal performan ce in industry-standard package size A pplications • Synchronous rectifier DC/DC converter 5 6 7 8 Bottom-sid e Drain Contact 4 3 2 1 Absolute Maxi mum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source V oltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 ± 20 (Note 1a) Units V V.
Keywords FDS2170N7, datasheet, pdf, Fairchild Semiconductor, 200V, N-Channel, PowerTrench, MOSFET, DS2170N7, S2170N7, 2170N7, FDS2170N, FDS2170, FDS217, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)