F1001C Datasheet PDF


Part Number

F1001C

Description

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Manufacture

Polyfet RF Devices

Total Page 2 Pages
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Features Datasheet pdf polyfet rf devices General Description S ilicon VDMOS and LDMOS transistors desi gned specifically for broadband RF appl ications. Suitable for Military Radios, Cellular and Paging Amplifier Base Sta tions, Broadcast FM/AM, MRI, Laser Driv er and others. TM "Polyfet" process fea tures gold metal for greatly extended l ifetime. Low output capacitance and hig h Ft enhance broadband performance F10 01C PATENTED GOLD METALIZED SILICON GAT E ENHANCEMENT MODE RF POWER VDMOS TRANS ISTOR 20 Watts Single Ended Package Sty le AC HIGH EFFICIENCY, LINEAR, HIGH GAI N, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 50 Watts Junction to Case Thermal Resista nce 3.13 o C/W Maximum Junction Temp.
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F1001C Datasheet
polyfet rf devices
F1001C
General Description
Silicon VDMOS and LDMOS
PATENTED GOLD METALIZED
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Cellular and Paging Amplifier
Base Stations, Broadcast FM/AM,
20 Watts Single Ended
MRI, Laser Driver and others.
"Polyfet" TMprocess features
Package Style AC
gold metal for greatly extended
lifetime. Low output capacitance
HIGH EFFICIENCY, LINEAR,
and high Ft enhance broadband
performance
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
50 Watts
3.13 oC/W
200 oC
-65 oC to 150oC
2A
70 V 70V 30V
RF CHARACTERISTICS ( 20WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gain
16
dB Idq = 0.2 A, Vds = 28.0V, F = 175 MHz
η Drain Efficiency
60 % Idq = 0.2 A, Vds = 28.0V, F = 175 MHz
VSWR Load Mismatch Tolerance
20:1 Relative Idq = 0.2 A, Vds = 28.0V, F = 175 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltage
65
V Ids = 0.05 A, Vgs = 0V
Idss Zero Bias Drain Current
1 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Current
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Current
1 7 V Ids = 0.1 A, Vgs = Vds
gM Forward Transconductance
0.8 Mho Vds = 10V, Vgs = 5V
Rdson Saturation Resistance
1
Ohm
Vgs = 20V, Ids = 4A
Idsat
Saturation Current
5.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitance
33 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
4
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
20 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com




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