F1021 TRANSISTOR Datasheet

F1021 Datasheet, PDF, Equivalent


Part Number

F1021

Description

RF POWER VDMOS TRANSISTOR

Manufacture

Polyfet RF Devices

Total Page 2 Pages
Datasheet
Download F1021 Datasheet


F1021
polyfet rf devices
F1021
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
"Polyfet" TMprocess features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
100 Watts Gemini
Package Style AK
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
ABSOLUTE MAXIMUM RATINGS (TC = 25 Co )
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
350 Watts
0.5 oC/W
200 oC
-65 oC to 150oC
16 A
70 V
70 V 30V
RF CHARACTERISTICS ( 100WATTS OUTPUT )
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Gps Common Source Power Gai
12
dB Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
η Drain Efficiency
60 % Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
VSWR Load Mismatch Toleranc
20:1 Relative Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL PARAMETER
MIN TYP MAX UNITS TEST CONDITIONS
Bvdss Drain Breakdown Voltag
65
V Ids = 0.2 A, Vgs = 0V
Idss Zero Bias Drain Curren
4 mA Vds = 28.0 V, Vgs = 0V
Igss Gate Leakage Curren
1 uA Vds = 0 V, Vgs = 30V
Vgs Gate Bias for Drain Curren
1 7 V Ids = 0.4 A, Vgs = Vds
gM Forward Transconductanc
3.2
Mho
Vds = 10V, Vgs = 5V
Rdson Saturation Resistanc
0.35
Ohm
Vgs = 20V, Ids = 16 A
Idsat
Saturation Curren
22
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
132 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
16
pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
80 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com

F1021
POUT VS PIN GRAPH
F1021
CAPACITANCE VS VOLTAGE
160
140
120
100
80
60
40
20
0
0
F1021 POUT vs PIN FREQ=400 MHZ; IDQ=1.6A; VDS=28V
GAIN
POUT
Efficiency = 55%
2 4 6 8 10 12 14 16 18
PIN IN WATTS
POUT
GAIN
16
15
14
13
12
11
10
9
8
20
IV CURVE
F1B 4DIE CAPACITANCE
1000
Coss
Ciss
100
Crss
10
0
5 10 15 20 25 30
VDS IN VOLTS
ID AND GM VS VGS
30
25
20
15
10
5
0
0
2
Vg = 2V
F1B 4DIE IV CURVE
46
Vg = 4V
8 10 12
Vds in Volts
Vg = 6V
Vg = 8V
14 16
Vg = 10V
18 20
Vg = 12V
F1B 4 DIE GM & ID vs VGS
100
Id
10
1
Gm
0.1
0 2 4 6 8 10 12 14
Vgs in Volts
S11 AND S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com


Features polyfet rf devices General Description S ilicon VDMOS and LDMOS transistors desi gned specifically for broadband RF appl ications. Suitable for Military Radios, Cellular and Paging Amplifier Base Sta tions, Broadcast FM/AM, MRI, Laser Driv er and others. "Polyfet" process featur es gold metal for greatly extended life time. Low output capacitance and high F t enhance broadband performance TM F10 21 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSI STOR 100 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 350 Watt s Junction to Case Thermal Resistance 0 .5 o C/W Maximum Junction Temperature 2 00 o C Storage Temperature DC Drain Cur rent Drain to Gate Voltage 70 V Drain t o Source Voltage 70 V Gate to Source Vo ltage 30V o -65 o C to 150o C 16 A RF CHARACTERISTICS ( SYMBOL Gps PARAMET ER Common Source Power Gai Drain Effici ency Load Mismatch Toleranc MIN 12 60 TYP 100WATTS OUTPUT ) MA.
Keywords F1021, datasheet, pdf, Polyfet RF Devices, RF, POWER, VDMOS, TRANSISTOR, 1021, 021, 21, F102, F10, F1, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




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