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ATF-13736

Agilent(Hewlett-Packard)
Part Number ATF-13736
Manufacturer Agilent(Hewlett-Packard)
Description 2-16 GHz Low Noise Gallium Arsenide FET
Published Mar 30, 2005
Detailed Description 2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features • Low Noise Figure: 1.8␣ dB Typical at 12␣ GH...
Datasheet PDF File ATF-13736 PDF File

ATF-13736
ATF-13736

Overview
2–16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13736 Features • Low Noise Figure: 1.
8␣ dB Typical at 12␣ GHz • High Associated Gain: 9.
0␣ dB Typical at 12␣ GHz • High Output Power: 17.
5␣ dB Typical at 12␣ GHz • Cost Effective Ceramic Microstrip Package • Tape-and-Reel Packaging Option Available[1] Description The ATF-13736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.
Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range.
This GaAs FET device has a nominal 0.
3 micron gate length with a total gate periphery of ...


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