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FQP1N60
QFET N-CHANNEL
Description
QFET N-CHANNEL FQP1N60 FEATURES BVDSS = 600V Advanced New Design Avalanche Rugged Technology Rugged Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge: 5.0nC (Typ.) Extended Safe Operating Area Lower RDS(ON): 9.3Ω (Typ.) 1 2 3 RDS(ON) = 11.5Ω ID = 1.2A TO-220 1. Gate 2. Drain ...
Fairchild Semiconductor
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