RECTIFIER DIODES. BA158 Datasheet

BA158 DIODES. Datasheet pdf. Equivalent


EIC discrete Semiconductors BA158
BA157 - BA159
PRV : 400 - 1000 Volts
Io : 1.0 Ampere
FAST RECOVERY
RECTIFIER DIODES
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Peak Forward Surge Current,
Ta = 45 °C
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
BA157
400
280
400
BA158
600
420
600
1.0
BA159
1000
700
1000
UNIT
V
V
V
A
35
1.3
5.0
100
150
20
- 65 to + 150
- 65 to + 150
250
A
V
µA
µA
ns
pf
°C
°C
Rev. 01 : Apr. 2, 2002


BA158 Datasheet
Recommendation BA158 Datasheet
Part BA158
Description FAST RECOVERY RECTIFIER DIODES
Feature BA158; BA157 - BA159 PRV : 400 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability .
Manufacture EIC discrete Semiconductors
Datasheet
Download BA158 Datasheet




EIC discrete Semiconductors BA158
RATING AND CHARACTERISTIC CURVES ( BA157 - BA159 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+ 0.5 A
Trr
+
50 Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25 A
1 OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
SET TIME BASE FOR 50-100 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
35
8.3 ms SINGLE HALF SINE WAVE
28 Ta = 50 °C
0.6 21
0.4 14
0.2
RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
7
0
1
2
4 6 10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
20
10
Pulse Width = 300 µs
2% Duty Cycle
1.0
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
TJ = 25 °C
0.1
0.1
TJ = 25 °C
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
Page 2 of 2
Rev. 01 : Apr. 2, 2002







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