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2SD2385

NPN Transistor

Description

2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary to 2SB1556 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Co...

Toshiba Semiconductor

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