Diode Array. 74F1056 Datasheet

74F1056 Array. Datasheet pdf. Equivalent


Fairchild Semiconductor 74F1056
December 1993
Revised August 1999
74F1056
8-Bit Schottky Barrier Diode Array
General Description
The 74F1056 is an 8-bit Schottky barrier diode array
designed to be employed as termination on the inputs to
memory bus lines or CLOCK lines. This device is designed
to suppress negative transients caused by line reflections,
switching noise and crosstalk.
Features
s 8-Bit array structure designed to suppress negative
transients
s Guaranteed ESD protection (HBM) in excess of 4 kV
s Common anode shared by all eight diodes
s Broadside pinout for ease of bus routing
Ordering Code:
Order Number Package Number
Package Description
74F1056SC
M16A
16-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150 Narrow
Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code.
Connection Diagram
Schematic Diagram
© 1999 Fairchild Semiconductor Corporation DS011655
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74F1056 Datasheet
Recommendation 74F1056 Datasheet
Part 74F1056
Description 8-Bit Schottky Barrier Diode Array
Feature 74F1056; 74F1056 8-Bit Schottky Barrier Diode Array December 1993 Revised August 1999 74F1056 8-Bit Schottk.
Manufacture Fairchild Semiconductor
Datasheet
Download 74F1056 Datasheet




Fairchild Semiconductor 74F1056
Absolute Maximum Ratings(Note 1)
Storage Temperature
65°C to +150°C
Operating Free-Air Temperature
0°C to 70°C
Steady State Reverse Voltage, (VR)
Continuous Total Power Dissipation at or below
7.0V
25°C Free-Air Temperature, (PD)
Continuous Forward Current, (If)
Any Output Pin to GND
750 mW
50 mA
Total Through All GND Pins
170 mA
Repetitive Peak Forward Current, lfp (Note 2)
Any Output Pin to GND
300 mA
Total Through All GND Pins
1.2A
ESD (HBM)
4 kV
Note 1: Absolute maximum ratings are valued beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: These values apply for the tw 100 µs, duty cycle 20%.
DC Electrical Characteristics
Over recommended operating free air temperature range, unless otherwise noted
SINGLE DIODE OPERATION (Note 3)
Symbol
Parameter
Min Typ
Max
VBR Reverse Breakdown Voltage
IR Static Reverse Current
VF Static Forward Voltage
CT Total Capacitance
7.0
10
0.65
0.85
0.8
1.0
5 10
48
Note 3: These tests apply to separate diode operation, diodes not under test are open-circuit.
Units
V
µA
V
pF
Conditions
IR = 10 µA
VR = 7V
IF = −16 mA
IF = −50 mA
VI = 0V, f = 1 MHz
VI = 2V, f = 1 MHz
MULTIPLE DIODE OPERATION
Symbol
Parameter
Min Typ Max
ICR Internal Crosstalk Current
0.2 2
Note 4: ICR is measured under the following conditions: One diode static, all others switching
Switching diodes: tW = 100 µs; Static diode: VIN = 6V
Duty cycle = 20%, If = 200 mA
The static diode input current is the internal crosstalk current ICR.
Units
mA
Conditions
Total GND current = 1.2A (Note 4)
AC Electrical Characteristics
TA = 25°C
Symbol
Parameter
Min
Typ
Max
Units
Conditions
VFR Forward Recovery Voltage
TRR Reverse Recovery Time
1.25
5.0
V IF = 300 mA
ns IF = 10 mA, IR = 1 mA
RL = 100
Figure
Number
Figure 1
Figure 2
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2



Fairchild Semiconductor 74F1056
AC Loading and Waveforms
tr = 20 ns, ZO = 50, freq = 500 Hz
FIGURE 1. Forward Recovery Voltage
tf = 0.5 ns, ZO = 50, tW = 50 ns, duty cycle = 0.01
RL = 100(Note )
Monitored by Oscilloscope having the following characteristics: tr 350 ps, RI = 50, CI = 5 pF.
FIGURE 2. Reverse Recovery Time
3
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