x 1-BIT. IDT6167SA Datasheet

IDT6167SA 1-BIT. Datasheet pdf. Equivalent

IDT6167SA Datasheet
Recommendation IDT6167SA Datasheet
Part IDT6167SA
Description CMOS STATIC RAM 16K (16K x 1-BIT)
Feature IDT6167SA; CMOS STATIC RAM 16K (16K x 1-BIT) Integrated Device Technology, Inc. IDT6167SA IDT6167LA FEATURES:.
Manufacture Integrated Device Technology
Datasheet
Download IDT6167SA Datasheet




Integrated Device Technology IDT6167SA
Integrated Device Technology, Inc.
CMOS STATIC RAM
16K (16K x 1-BIT)
IDT6167SA
IDT6167LA
FEATURES:
• High-speed (equal access and cycle time)
— Military: 15/20/25/35/45/55/70/85/100ns (max.)
— Commercial: 15/20/25/35ns (max.)
• Low power consumption
• Battery backup operation — 2V data retention voltage
(IDT6167LA only)
• Available in 20-pin CERDIP and Plastic DIP, and 20-pin
SOJ
• Produced with advanced CMOS high-performance
technology
• CMOS process virtually eliminates alpha particle soft-
error rates
• Separate data input and output
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The lDT6167 is a 16,384-bit high-speed static RAM orga-
nized as 16K x 1. The part is fabricated using IDT’s high-
performance, high reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also
offers a reduced power standby mode. When CS goes HIGH,
the circuit will automatically go to, and remain in, a standby
mode as long as CS remains HIGH. This capability provides
significant system-level power and cooling savings. The low-
power (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1µW
operating off a 2V battery.
All inputs and the output of the IDT6167 are TTL-compat-
ible and operate from a single 5V supply, thus simplifying
system designs.
The IDT6167 is packaged in a space-saving 20-pin, 300 mil
Plastic DIP or CERDIP, Plastic 20-pin SOJ, providing high
board-level packing densities.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
A0
ADDRESS
DECODE
16,384-BIT
MEMORY ARRAY
VCC
GND
A13
DIN
CS
CONTROL
LOGIC
WE
I/O CONTROL
DOUT
2981 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996 Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.2
MARCH 1996
2981/5
1



Integrated Device Technology IDT6167SA
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
A0
A1
A2
A3
A4
A5
A6
DOUT
WE
GND
1 20 VCC
2 19 A13
3 P20-1, 18 A12
4 D20-1, 17 A11
5 & 16 A10
6 S020-1 15 A9
7 14 A8
8 13 A7
9 12 DIN
10 11 CS
2981 drw 02
DIP/SOJ
TOP VIEW
PIN DESCRIPTIONS
A0–A13
CS
WE
Address Inputs
Chip Select
Write Enable
VCC Power
DIN DATAIN
DOUT
DATAOUT
GND
Ground
2981 tbl 01
TRUTH TABLE (1)
Mode
CS WE
Standby
HX
Read
LH
Write
LL
NOTE:
1. H = VIH, L = VIL, X = Don't Care.
Output
High-Z
DATAOUT
High-Z
Power
Standby
Active
Active
2981 tbl 02
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Temperature
GND
VCC
Military
–55°C to +125°C
0V 5V ± 10%
Commercial
0°C to +70°C
0V 5V ± 10%
2981 tbl 06
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
Com’l.
Mil. Unit
VTERM
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0
with Respect
to GND
V
TA Operating
Temperature
0 to +70 –55 to +125 °C
TBIAS
Temperature
Under Bias
–55 to +125 –65 to +135 °C
TSTG
Storage
Temperature
–55 to +125 –65 to +150 °C
PT
Power Dissipation
1.0
1.0 W
IOUT
DC Output
Current
50 50 mA
NOTE:
2981 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions Max. Unit
CIN Input Capacitance
VIN = 0V
7 pF
COUT Output Capacitance
VOUT = 0V
7 pF
NOTE:
2981 tbl 04
1. This parameter is determined by device characterization, but is not
production tested.
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
Min. Typ.
Max. Unit
VCC Supply Voltage
4.5 5.0 5.5 V
GND
Supply Voltage
0 0 0V
VIH
Input High Voltage
2.2 — 6.0 V
VIL
Input Low Voltage
–0.5(1)
0.8 V
NOTE:
2981 tbl 05
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
5.2 2



Integrated Device Technology IDT6167SA
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
DC ELECTRICAL CHARACTERISTICS(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V)
Symbol
Parameter
ICC1 Operating Power Supply Current
CS VIL, Outputs Open,
VCC = Max., f = 0(3)
ICC2 Dynamic Operating Current
CS VIL, Outputs Open,
VCC = Max., f = fMAX(3)
ISB Standby Power Supply Current
(TTL Level)
CS VIH, Outputs Open,
VCC = Max., f = fMAX(3)
ISB1 Full Standby Power Supply Current
(CMOS Level)
CS VHC, VCC = Max.
VIN VHC or VIN VLC, f = 0(3)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6167SA/LA15
Power Com’l. Mil.
SA 90 90
6167SA/LA20
Com’l. Mil.
90 90
6167SA/LA25
Com’l. Mil.
90 90
Unit
mA
LA 55 60 55 60 55 60
SA 120 130 100 110 100 100 mA
LA 100 110 80 85 70 75
SA 50 50 35 35 35 35 mA
LA 35 35 30 30 25 25
SA 5 10 5 10 5 10 mA
LA 0.9
2 0.05 2 0.05 0.9
DC ELECTRICAL CHARACTERISTICS(1) (CONTINUED)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V)
6167SA/LA35 6167SA/LA45(2) 6167SA/LA55(2) 6167SA/LA70(2)
Symbol
Parameter
Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit
ICC1 Operating Power Supply Current
CS VIL, Outputs Open,
VCC = Max., f = 0(3)
SA 90 90 — 90 — 90 — 90 mA
LA 55 60 — 60 — 60 — 60
ICC2 Dynamic Operating Current
CS VIL, Outputs Open,
VCC = Max., f = fMAX(3)
ISB Standby Power Supply Current
(TTL Level)
CS VIH, Outputs Open,
VCC = Max., f = fMAX(3)
SA 100 100
LA 65 70
SA 35 35
LA 20 20
— 100 — 100 — 100 mA
— 65 — 60 — 60
— 35 — 35 — 35 mA
— 20 — 20 — 15
ISB1 Full Standby Power Supply Current
(CMOS Level)
CS VHC, VCC = Max.
VIN VHC or VIN VLC, f = 0(3)
SA 5 10
LA 0.05 0.9
— 10 — 10 — 10 mA
— 0.9 — 0.9 — 0.9
NOTES:
1. All values are maximum guaranteed values.
2. –55°C to +125°C temperature range only. Also available; 85ns and 100ns Military devices.
3. fMAX = 1/tRC, only address inputs cycling at fMAX. f = 0 means no Address inputs change.
2981 tbl 07
5.2 3







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