NPN Amplifier. KSP2222A Datasheet

KSP2222A Amplifier. Datasheet pdf. Equivalent

KSP2222A Datasheet
Recommendation KSP2222A Datasheet
Part KSP2222A
Description NPN Amplifier
Feature KSP2222A; KSP2222A — NPN General-Purpose Amplifier November 2014 KSP2222A NPN General-Purpose Amplifier Fea.
Manufacture Fairchild Semiconductor
Datasheet
Download KSP2222A Datasheet




Fairchild Semiconductor KSP2222A
November 2014
KSP2222A
NPN General-Purpose Amplifier
Features
• Collector-Emitter Voltage: VCEO = 40 V
• Available as PN2222A
1 23
TO-92
1. Emitter 2. Base 3. Collector
Ordering Information
Part Number
KSP2222ABU
KSP2222ATA
KSP2222ATF
Marking
KSP2222A
KSP2222A
KSP2222A
Package
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Tape and Reel
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
75
40
6.0
600
150
-55 to +150
V
V
V
mA
°C
°C
© 2001 Fairchild Semiconductor Corporation
KSP2222A Rev. 1.2
www.fairchildsemi.com



Fairchild Semiconductor KSP2222A
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
PD
RθJC
RθJA
Power Dissipation by RθJA
Derate Above 25°C
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
625
5
83.3
200
mW
mW/°C
°C/W
°C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Collector-Base Breakdown Voltage IC = 10 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 10 μA, IC = 0
Collector Cut-Off Current
VCB = 60 V, IE = 0
Emitter Cut-Off Current
VEB = 3.0 V, IC = 0
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1 mA
DC Current Gain
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 150 mA(2)
VCE = 10 V, IC = 500 mA(2)
Collector-Emitter Saturation Voltage(2) IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Base-Emitter Saturation Voltage(2)
IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
Current Gain Bandwidth Product
IC = 20 mA, VCE = 20 V,
f = 100 MHz
Output Capacitance
VCB = 10 V, IE = 0,
f = 1.0 MHz
tON Turn-On Time
tOFF Turn-Off Time
NF Noise Figure
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA, VBE(off) = 0.5 V
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
IC = 100 μA, VCE = 10 V,
RS = 1 kΩ, f = 1.0 kHz
Note:
2. Pulse test: Pulse width 300 μs, duty cycle 2%
Min.
75
40
6.0
35
50
75
100
40
0.6
300
Max.
0.01
10
Unit
V
V
V
μA
nA
300
0.3
V
1.0
1.2
V
2.0
MHz
8 pF
35 ns
285 ns
4 dB
© 2001 Fairchild Semiconductor Corporation
KSP2222A Rev. 1.1.0
2
www.fairchildsemi.com



Fairchild Semiconductor KSP2222A
Physical Dimensions
D
Figure 1. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type
© 2001 Fairchild Semiconductor Corporation
KSP2222A Rev. 1.1.0
3
www.fairchildsemi.com







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