TL081 OPERATIONAL AMPLIFIER Datasheet

TL081 Datasheet, PDF, Equivalent


Part Number

TL081

Description

WIDE BANDWIDTH JFET INPUT OPERATIONAL AMPLIFIER

Manufacture

National Semiconductor

Total Page 8 Pages
Datasheet
Download TL081 Datasheet


TL081
December 1995
TL081 Wide Bandwidth JFET
Input Operational Amplifier
General Description
The TL081 is a low cost high speed JFET input operational
amplifier with an internally trimmed input offset voltage
(BI-FET IITM technology) The device requires a low supply
current and yet maintains a large gain bandwidth product
and a fast slew rate In addition well matched high voltage
JFET input devices provide very low input bias and offset
currents The TL081 is pin compatible with the standard
LM741 and uses the same offset voltage adjustment circuit-
ry This feature allows designers to immediately upgrade the
overall performance of existing LM741 designs
The TL081 may be used in applications such as high speed
integrators fast D A converters sample-and-hold circuits
and many other circuits requiring low input offset voltage
low input bias current high input impedance high slew rate
and wide bandwidth The devices has low noise and offset
voltage drift but for applications where these requirements
Typical Connection
are critical the LF356 is recommended If maximum supply
current is important however the TL081C is the better
choice
Features
Y Internally trimmed offset voltage
Y Low input bias current
Y Low input noise voltage
Y Low input noise current
Y Wide gain bandwidth
Y High slew rate
Y Low supply current
Y High input impedance
Y Low total harmonic distortion AV e 10
RL e 10k VO e 20 Vp-p
BW e 20 Hzb20 kHz
Y Low 1 f noise corner
Y Fast settling time to 0 01%
15 mV
50 pA
25 nV 0Hz
0 01 pA 0Hz
4 MHz
13 V ms
1 8 mA
1012X
k0 02%
50 Hz
2 ms
Simplified Schematic
Connection Diagram
TL H 8358 – 1
Dual-In-Line Package
TL H 8358 – 2
BI-FET IITM is a trademark of National Semiconductor Corp
C1995 National Semiconductor Corporation TL H 8358
Order Number TL081CP
See NS Package Number N08E
TL H 8358 – 4
RRD-B30M125 Printed in U S A

TL081
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
Supply Voltage
g18V
Power Dissipation (Notes 1 and 6)
670 mW
Operating Temperature Range
0 C to a70 C
Tj(MAX)
Differential Input Voltage
115 C
g30V
Input Voltage Range (Note 2)
Output Short Circuit Duration
Storage Temperature Range
Lead Temp (Soldering 10 seconds)
ijA
ESD rating to be determined
g15V
Continuous
b65 C to a150 C
260 C
120 C W
DC Electrical Characteristics (Note 3)
Symbol
Parameter
Conditions
VOS
DVOS DT
IOS
IB
RIN
AVOL
VO
VCM
CMRR
PSRR
IS
Input Offset Voltage
Average TC of Input Offset
Voltage
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage Gain
Output Voltage Swing
Input Common-Mode Voltage
Range
Common-Mode Rejection Ratio
Supply Voltage Rejection Ratio
Supply Current
RS e 10 kX TA e 25 C
Over Temperature
RS e 10 kX
Tj e 25 C (Notes 3 4)
Tj s 70 C
Tj e 25 C (Notes 3 4)
Tj s 70 C
Tj e 25 C
VS e g15V TA e 25 C
VO e g10V RL e 2 kX
Over Temperature
VS e g15V RL e 10 kX
VS e g15V
RS s 10 kX
(Note 5)
Min
25
15
g12
g11
70
70
TL081C
Typ
5
10
25
50
1012
100
g13 5
a15
b12
100
100
18
Max
15
20
100
4
200
8
28
Units
mV
mV
mV C
pA
nA
pA
nA
X
V mV
V mV
V
V
V
dB
dB
mA
AC Electrical Characteristics (Note 3)
Symbol
Parameter
Conditions
TL081C
Min Typ Max
Units
SR Slew Rate
VS e g15V TA e 25 C
13
V ms
GBW
Gain Bandwidth Product
VS e g15V TA e 25 C
4
MHz
en
Equivalent Input Noise Voltage
TA e 25 C RS e 100X
f e 1000 Hz
25
nV 0Hz
in
Equivalent Input Noise Current
Tj e 25 C f e 1000 Hz
0 01
pA 0Hz
Note 1 For operating at elevated temperature the device must be derated based on a thermal resistance of 120 C W junction to ambient for N package
Note 2 Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage
Note 3 These specifications apply for VS e g15V and 0 C sTA s a70 C VOS IB and IOS are measured at VCM e 0
Note 4 The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature Tj Due to the limited
production test time the input bias currents measured are correlated to junction temperature In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation PD Tj e TA a ijA PD where ijA is the thermal resistance from junction to ambient Use of a heat sink is
recommended if input bias current is to be kept to a minimum
Note 5 Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
VS e g5V to g15V
Note 6 Max Power Dissipation is defined by the package characteristics Operating the part near the Max Power Dissipation may cause the part to operate
outside guaranteed limits
2


Features TL081 Wide Bandwidth JFET Input Operatio nal Amplifier December 1995 TL081 Wid e Bandwidth JFET Input Operational Ampl ifier General Description The TL081 is a low cost high speed JFET input operat ional amplifier with an internally trim med input offset voltage (BI-FET IITM t echnology) The device requires a low su pply current and yet maintains a large gain bandwidth product and a fast slew rate In addition well matched high volt age JFET input devices provide very low input bias and offset currents The TL0 81 is pin compatible with the standard LM741 and uses the same offset voltage adjustment circuitry This feature allow s designers to immediately upgrade the overall performance of existing LM741 d esigns The TL081 may be used in applica tions such as high speed integrators fa st D A converters sample-and-hold circu its and many other circuits requiring l ow input offset voltage low input bias current high input impedance high slew rate and wide bandwidth The devices has low noise and offset vo.
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