SILICON RECTIFIER. S2B Datasheet

S2B RECTIFIER. Datasheet pdf. Equivalent

Part S2B
Description SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER
Feature S2A THRU S2M SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER Reverse Voltage - 50 to 1000 Volts DO-.
Manufacture General Semiconductor
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S2B
S2A THRU S2M
SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes
DO-214AA
MODIFIED J-BEND
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
MAX.
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief,
ideal for automated placement
Glass passivated chip junction
High temperature soldering:
250°C/10 seconds at terminals
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic body over
passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounce, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS S2A
S2B
Device marking code
SA SB
Maximum repetitive peak reverse voltage
VRRM
50 100
Maximum RMS voltage
VRMS
35 70
Maximum DC blocking voltage
VDC 50 100
Maximum average forward rectified current
at TL=100°C
I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) TL=100°C
IFSM
Maximum instantaneous forward voltage at 1.5 A
VF
Maximum DC reverse current
at Rated DC blocking voltage
TA=25°C
TA=125°C
IR
Typical reverse recovery time (NOTE 1)
trr
Typical junction capacitance (NOTE 2)
CJ
Typical thermal resistance (NOTE 3)
RΘJA
RΘJL
Operating and storage temperature range
TJ, TSTG
S2D S2G S2J
SD SG SJ
200 400 600
140 280 420
200 400 600
1.5
50.0
1.15
1.0
125.0
2.0
30.0
53.0
16.0
-55 to +150
S2K S2M UNITS
SK SM
800 1000 Volts
560 700 Volts
800 1000 Volts
Amps
Amps
Volts
µA
µs
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and junction to lead
P.C.B. mounted on 0.27 x 0.27” (7.0 x 7.0mm) copper pad areas
4/98



S2B
RATINGS AND CHARACTERISTIC CURVES S2A THRU S2M
FIG. 1 - FORWARD CURRENT DERATING CURVE
60 HZ RESISTIVE OR
1.5 INDUCTIVE LOAD
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
TL=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
40
1.0 30
0.5 60 HZ RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
0.27 x 0.27” (7.0 x 7.0mm)
COPPER PAD AREAS
0
50 60 70 80 90 100 110 120 130 140 150
LEAD TEMPERATURE, °C
20
10
0
1
10
NUMBER OF CYCLES AT 60 HZ
100
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ=125°C
1 TJ=100°C
0.1
0.01
0.4 0.6 0.8 11.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
0.1
0.01
0
TJ=25°C
20 40 60 80
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
100
100
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
10
1
0.1 1 10 100
REVERSE VOLTAGE, VOLTS





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