JANSR2N7272 Datasheet: 8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET





JANSR2N7272 8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET Datasheet

Part Number JANSR2N7272
Description 8A/ 100V/ 0.180 Ohm/ Rad Hard/ N-Channel Power MOSFET
Manufacture Intersil Corporation
Total Page 7 Pages
PDF Download Download JANSR2N7272 Datasheet PDF

Features: JANSR2N7272 Formerly FRL130R4 June 1998 8A, 100V, 0.180 Ohm, Rad Hard, N-Chann el Power MOSFET Description The Intersi l Corporation,has designed a series of SECOND GENERATION hardened power MOSFET s of both N-Channel and P-Channel enhan cement types with ratings from 100V to 500V, 1A to 60A, and on resistance as l ow as 25mΩ . Total dose hardness is o ffered at 100K RAD (Si) and 1000K RAD ( Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without curren t limiting and 2E12 with current limiti ng. This MOSFET is an enhancement-mode silicon-gate power field effect transi stor of the vertical DMOS (VDMOS) struc ture. It is specially designed and proc essed to exhibit minimal characteristic changes to total dose (GAMMA) and neut ron (no) exposures. Design and processi ng efforts are also directed to enhance survival to dose rate (GAMMA DOT) expo sure. Also available at other radiation and screening levels. See u.

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JANSR2N7272
Formerly FRL130R4
June 1998
8A, 100V, 0.180 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 8A, 100V, rDS(ON) = 0.180
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 1.5nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7272
TO-205AF
BRAND
JANSR2N7272
Die family TA17631.
MIL-PRF-19500/604.
Description
The Intersil Corporation,has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-Chan-
nel and P-Channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as
25m. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current
limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (no) exposures. Design and processing efforts are
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page:
http://www.semi.harris.com. Contact your local Intersil
Sales Office for additional information.
Symbol
D
G
Package
TO-205AF
S
DG S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-3
File Number 4297.2

                    






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