JANSR2N7292 Datasheet PDF | Intersil Corporation





(PDF) JANSR2N7292 Datasheet PDF

Part Number JANSR2N7292
Description 25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
Manufacture Intersil Corporation
Total Page 7 Pages
PDF Download Download JANSR2N7292 Datasheet PDF

Features: JANSR2N7292 Formerly FRF150R4 June 1998 25A, 100V, 0.070 Ohm, Rad Hard, N-Chan nel Power MOSFET Description The Inters il Corporation has designed a series of SECOND GENERATION hardened power MOSFE Ts of both N-Channel and P-Channel enha ncement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ . Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT ) exists for rates to 1E9 without curre nt limiting and 2E12 with current limit ing. This MOSFET is an enhancement-mode silicon-gate power field effect trans istor of the vertical DMOS (VDMOS) stru cture. It is specially designed and pro cessed to exhibit minimal characteristi c changes to total dose (GAMMA) and neu tron (no) exposures. Design and process ing efforts are also directed to enhanc e survival to dose rate (GAMMA DOT) exp osure. Also available at other radiation and screening levels. See .

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JANSR2N7292 datasheet
JANSR2N7292
Formerly FRF150R4
June 1998
25A, 100V, 0.070 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 25A, 100V, rDS(ON) = 0.070
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 7.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
PART NUMBER
PACKAGE
JANSR2N7292
TO-254AA
Die family TA17651.
MIL-PRF-19500/605.
BRAND
JANSR2N7292
Description
The Intersil Corporation has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-Chan-
nel and P-Channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as
25m. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current
limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (no) exposures. Design and processing efforts are
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.semi.har-
ris.com. Contact your local Intersil Sales Office for additional
information.
Symbol
D
G
S
Package
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-18
File Number 4293.2

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