JANSR2N7410 Datasheet: 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET





JANSR2N7410 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET Datasheet

Part Number JANSR2N7410
Description 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFET
Manufacture Intersil Corporation
Total Page 8 Pages
PDF Download Download JANSR2N7410 Datasheet PDF

Features: JANSR2N7410 Formerly FSL110R4 March 1998 3.5A, 100V, 0.600 Ohm, Rad Hard, N-Ch annel Power MOSFET Description The Disc rete Products Operation of Intersil Cor poration has developed a series of Radi ation Hardened MOSFETs specifically des igned for commercial and military space applications. Enhanced Power MOSFET im munity to Single Event Effects (SEE), S ingle Event Gate Rupture (SEGR) in part icular, is combined with 100K RADS of t otal dose hardness to provide devices w hich are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military appli cations have not been sacrificed. The Intersil portfolio of SEGR resistant ra diation hardened MOSFETs includes N-Cha nnel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enha ncement-mode silicon-gate power field- effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be rad.

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JANSR2N7410
Formerly FSL110R4
March 1998
3.5A, 100V, 0.600 Ohm, Rad Hard,
N-Channel Power MOSFET
Features
• 3.5A, 100V, rDS(ON) = 0.600
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and
VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2
Ordering Information
PART NUMBER
JANSR2N7410
PACKAGE
TO-205AF
Die Family TA17616.
MIL-PRF-19500/638.
BRAND
JANSR2N7410
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be oper-
ated directly from integrated circuits.
Also available at other radiation and screening levels. See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional informa-
tion.
Symbol
Package
TO-205AF
DG S
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
2-94
File Number 4500.1

                    
  






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