JANTX1N6101 Datasheet PDF | Microsemi Corporation





(PDF) JANTX1N6101 Datasheet PDF

Part Number JANTX1N6101
Description MONOLITHIC AIR ISOLATED DIODE ARRAY
Manufacture Microsemi Corporation
Total Page 1 Pages
PDF Download Download JANTX1N6101 Datasheet PDF

Features: 1N6101 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-92 4-9280 Fax: 617-924-1235 DIODE ARRAY P RODUCT SPECIFICATION MONOLITHIC AIR ISO LATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 75V at 5uA Ir < 100nA at 40V C < 4.0 pF 1 1 6 2 15 3 14 4 13 5 12 6 11 7 10 Absolute Maximum Ratings: Symbol VBR(R) *1 *2 IO *1 * 3 IFSM *1 PT1 *4 P T2 *4 Top Tstg Parameter Reverse Breakd own Voltage Continuous Forward Current Peak Surge Current (tp= 1/120 s) Power Dissipation per Junction @ 25°C Power Dissipation per Package @ 25°C Operati ng Junction Temperature Range Storage T emperature Range Limit 75 300 500 400 6 00 -65 to +150 -65 to +200 Unit Vdc mAd c mAdc mW mW °C °C 8 9 .320 .290 . 200 .100 .200 MAX .310 .220 .005 MIN . 023 .014 .070 .030 .785 MAX .100 BSC .098 MAX NOTE 1: Each Diode NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 2 0% NOTE 3: Derate at 2.4mA/°C above +2 5 °C NOTE 4: Derate at 4.0mW/°C above +25 °C .060 .015 O-15 .015 .008 El.

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JANTX1N6101 datasheet
A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
1N6101
Phone: 617-924-9280
Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
FEATURES:
HERMETIC CERAMIC PACKAGE
Bv > 75V at 5uA
Ir < 100nA at 40V
C < 4.0 pF
Absolute Maximum Ratings:
1 16
2 15
3 14
4 13
5 12
6 11
7 10
89
Symbol
Parameter
VBR(R) *1 *2 Reverse Breakdown Voltage
IO *1 * 3 Continuous Forward Current
IFSM *1 Peak Surge Current (tp= 1/120 s)
PT1 *4 Power Dissipation per Junction @ 25°C
PT2 *4 Power Dissipation per Package @ 25°C
Top Operating Junction Temperature Range
Tstg Storage Temperature Range
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
Limit Unit
75 Vdc
300 mAdc
500 mAdc
400 mW
600 mW
-65 to +150 °C
-65 to +200 °C
.200
.100
.023
.014
.070
.030
.100
BSC
.200
MAX
.320
.290
.310
.220
.785
MAX
.060
.015
O-15
.005
MIN
.098
MAX
.015
.008
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
PACKAGE OUTLINE
Symbol Parameter
Conditions
Min Max Unit
Vf1 Forward Voltage
If = 100mAdc *1
IR1 Reverse Current
VR = 40 Vdc
IR2 Reverse Current
VR = 20 Vdc
Ct Capacitance (pin to pin) VR = 0Vdc; f = 1 MHz
tfr Forward Recovery Time If = 100mAdc
trr Reverse Recovery Time If = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms
VF5 Forward Voltage Match If = 10 mA
1 Vdc
0.1 uAdc
25 nAdc
4.0 pF
15 ns
10 ns
5 mV
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1016.PDF Rev - 11/25/98

JANTX1N6101 datasheet  






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