JANTX2N6784 Datasheet PDF Download, International Rectifier





(PDF) JANTX2N6784 Datasheet Download

Part Number JANTX2N6784
Description TRANSISTORS
Manufacture International Rectifier
Total Page 7 Pages
PDF Download Download JANTX2N6784 Datasheet PDF

Features: PD-90424D REPETITIVE AVALANCHE AND dv/d t RATED HEXFET®TRANSISTORS THRU-HOLE-T O-205AF (TO-39) Product Summary Part Number BVDSS RDS(on) IRFF210 200V 1.5 Ω ID 2.25A IRFF210 JANTX2N6784 JANT XV2N6784 REF:MIL-PRF-19500/556 200V, N- CHANNEL The HEXFET®technology is the key to International Rectifier’s adva nced line of power MOSFET transistors. The efficient geometry and unique proce ssing of this latest “State of the Ar t” design achieves: very low onstate resistance combined with high transcond uctance. The HEXFET transistors also fe ature all of the well established advan tages of MOSFETs such as voltage contro l, very fast switching, ease of parelle ling and temperature stability of the e lectrical parameters. They are well sui ted for applications such as switching power supplies, motor controls, inverte rs, choppers, audio amplifiers and high energy pulse circuits. TO-39 Features : n Repetitive Avalanche Ratings n Dyna mic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease.

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PD-90424D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE-TO-205AF (TO-39)
Product Summary
Part Number BVDSS RDS(on)
IRFF210
200V 1.5
ID
2.25A
IRFF210
JANTX2N6784
JANTXV2N6784
REF:MIL-PRF-19500/556
200V, N-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
Units
2.25
1.50
A
9.0
15 W
0.12
W/°C
±20 V
48 mJ
2.25
A
1.5 mJ
5.0 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
www.irf.com
1
06/03/15

                    






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