JANTX2N6798 Datasheet: POWER MOSFET N-CHANNEL





JANTX2N6798 POWER MOSFET N-CHANNEL Datasheet

Part Number JANTX2N6798
Description POWER MOSFET N-CHANNEL
Manufacture International Rectifier
Total Page 7 Pages
PDF Download Download JANTX2N6798 Datasheet PDF

Features: PD-90431D REPETITIVE AVALANCHE AND dv/d t RATED HEXFET®TRANSISTORS THRU-HOLE - TO-205AF (TO-39) Product Summary Par t Number BVDSS IRFF230 200V RDS(on) 0.40Ω ID 5.5A IRFF230 JANTX2N6798 J ANTXV2N6798 REF:MIL-PRF-19500/557 200V, N-CHANNEL The HEXFET®technology is t he key to International Rectifier’s a dvanced line of power MOSFET transistor s. The efficient geometry and unique pr ocessing of this latest “State of the Art” design achieves: very low on-st ate resistance combined with high trans conductance. The HEXFET transistors als o feature all of the well established a dvantages of MOSFETs such as voltage co ntrol, very fast switching, ease of par elleling and temperature stability of t he electrical parameters. They are well suited for applications such as switch ing power supplies, motor controls, inv erters, choppers, audio amplifiers and high energy pulse circuits. TO-39 Feat ures: n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n .

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PD-90431D
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET®TRANSISTORS
THRU-HOLE - TO-205AF (TO-39)
Product Summary
Part Number BVDSS
IRFF230
200V
RDS(on)
0.40
ID
5.5A
IRFF230
JANTX2N6798
JANTXV2N6798
REF:MIL-PRF-19500/557
200V, N-CHANNEL
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry and unique
processing of this latest “State of the Art” design
achieves: very low on-state resistance combined with
high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
n ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
5.5
3.5 A
22
25 W
0.20
W/°C
±20 V
207.5
mJ
5.5 A
2.5 mJ
4.5 V/ns
-55 to 150
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/27/15

                    






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