JANTXV2N6762 Datasheet PDF | International Rectifier





(PDF) JANTXV2N6762 Datasheet PDF

Part Number JANTXV2N6762
Description POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
Manufacture International Rectifier
Total Page 7 Pages
PDF Download Download JANTXV2N6762 Datasheet PDF

Features: PD - 90336F IRF430 REPETITIVE A V ALANC HE AND dv/dt RATED JANTX2N6762  HEXF ET TRANSISTORS JANTXV2N6762 THRU-HOLE ( TO-204AA/AE) [REF:MIL-PRF-19500/542] 50 0V, N-CHANNEL Product Summary Part Numb er IRF430 BVDSS 500V RDS(on) 1.5 Ω ID 4.5A The HEXFETtechnology is the k ey to International Rectifier’s advan ced line of power MOSFET transistors. T he efficient geometry and unique proces sing of this latest “State of the Art ” design achieves: very low on-state resistance combined with high transcond uctance; superior reverse energy and di ode recovery dv/dt capability. The HEXF ET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast swit ching, ease of paralleling and temperat ure stability of the electrical paramet ers. They are well suited for applicati ons such as switching power supplies, m otor controls, inverters, choppers, aud io amplifiers and high energy pulse cir cuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/.

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JANTXV2N6762 datasheet
PD - 90336F
IRF430
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
JANTX2N6762
JANTXV2N6762
THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]
500V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF430
500V
RDS(on)
1.5
ID
4.5A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
4.5
3.0 A
18
75 W
0.6 W/°C
±20 V
1.1 mJ
4.5 A
— mJ
3.5 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01

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