JANTXV2N6800 Datasheet PDF


Part Number

JANTXV2N6800

Description

POWER MOSFET N-CHANNEL(BVdss=400V/ Rds(on)=1.0ohm/ Id=3.0A)

Manufacture

International Rectifier

Total Page 6 Pages
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Features Datasheet pdf Previous Datasheet Index Next Data She et Provisional Data Sheet No. PD-9.432B HEXFET ® JANTX2N6800 POWER MOSFET JANTXV2N6800 [REF:MIL-PRF-19500/557] [G ENERIC:IRFF330] N-CHANNEL Product Summa ry Part Number JANTX2N6800 JANTXV2N6800 BVDSS 400V RDS(on) 1.0Ω ID 3.0A 400 Volt, 1.0Ω HEXFET HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transi stors. The efficient geometry achieves very low onstate resistance combined wi th high transconductance. HEXFET transi stors also feature all of the well-esta blish advantages of MOSFETs, such as vo ltage control, very fast switching, eas e of paralleling and electrical paramet er temperature stability. They are well-sui.
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JANTXV2N6800 Datasheet
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Provisional Data Sheet No. PD-9.432B
JANTX2N6800
HEXFET® POWER MOSFET
JANTXV2N6800
[REF:MIL-PRF-19500/557]
[GENERIC:IRFF330]
N-CHANNEL
400 Volt, 1.0HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Product Summary
Part Number
BVDSS
JANTX2N6800
JANTXV2N6800
400V
Features:
s Avalanche Energy Rating
s Dynamic dv/dt Rating
s Simple Drive Requirements
s Ease of Paralleling
s Hermetically Sealed
RDS(on)
1.0
ID
3.0A
Absolute Maximum Ratings
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current Œ
Max. Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Ž
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6800, JANTXV2N6800 Units
3.0
2.0 A
12.0
25 W
0.20
W/K 
±20 V
4.0 V/ns
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
0.98 (typical)
oC
g
To Order




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