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K4S161622D

Samsung semiconductor

512K x 16Bit x 2 Banks Synchronous DRAM


Description
K4S161622D 512K x 16Bit x 2 Banks Synchronous DRAM FEATURES 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock ...



Samsung semiconductor

K4S161622D

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