PD - 9.1617A
PRELIMINARY
l l l l l l
IRF3315S/L
HEXFET® Power MOSFET
D
Advanced Process Technology Surface Mount (IRF3315S) Low-profile through-hole (IRF3315L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
VDSS = 150V
G S
RDS(on) = 0.082Ω ID = 21A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced proc...
