Power MOSFET. IRF3415L Datasheet

IRF3415L MOSFET. Datasheet pdf. Equivalent


International Rectifier IRF3415L
l Advanced Process Technology
l Surface Mount (IRF3415S)
l Low-profile through-hole (IRF3415L)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF3415L) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91509C
IRF3415S/L
HEXFET® Power MOSFET
D VDSS = 150V
RDS(on) = 0.042
ID = 43A
S
D 2 Pak
T O -26 2
Max.
43
30
150
3.8
200
1.3
± 20
590
22
20
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98


IRF3415L Datasheet
Recommendation IRF3415L Datasheet
Part IRF3415L
Description Power MOSFET
Feature IRF3415L; PD - 91509C IRF3415S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount .
Manufacture International Rectifier
Datasheet
Download IRF3415L Datasheet




International Rectifier IRF3415L
IRF3415S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
150 ––– ––– V VGS = 0V, ID = 250µA
––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA…
––– ––– 0.042 VGS = 10V, ID = 22A „
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
19 ––– ––– S VDS = 50V, ID = 22A…
––– ––– 25
––– ––– 250
µ A VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– ––– 200
ID = 22A
––– ––– 17
––– ––– 98
nC VDS = 120V
VGS = 10V, See Fig. 6 and 13 „…
––– 12 –––
VDD = 75V
–––
–––
55 –––
71 –––
ns
ID = 22A
RG = 2.5
––– 69 –––
RD = 3.3Ω, See Fig. 10 „…
Between lead,
––– 7.5 ––– nH and center of die contact
––– 2400 –––
VGS = 0V
––– 640 ––– pF VDS = 25V
––– 340 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) …
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 43
A showing the
integral reverse
––– ––– 150
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 22A, VGS = 0V „
––– 260 390 ns TJ = 25°C, IF = 22A
––– 2.2 3.3 µC di/dt = 100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width 300µs; duty cycle 2%.
‚ Starting TJ = 25°C, L = 2.4mH
RG = 25, IAS = 22A. (See Figure 12)
ƒ ISD 22A, di/dt 820A/µs, VDD V(BR)DSS,
TJ 175°C
… Uses IRF3415 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.



International Rectifier IRF3415L
IRF3415S/L
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
BOTTOM 4.55V.0V
100
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.5V
BOTTOM 45.5.0VV
100
4.5V
10
1
20us PULSE WIDTH
TJ = 25 oC
10 100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.5V
10
1
20us PULSE WIDTH
TJ = 175 oC
10 100
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = 25 °C
100
TJ = 175 ° C
V DS= 50V
20µs PULSE WIDTH
10
4 5 6 7 8 9 10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3.0 ID = 37A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( oC)
Fig 4. Normalized On-Resistance
Vs. Temperature







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