IRF9140
Data Sheet February 1999 File Number
2278.3
-19A, -100V, 0.200 Ohm, P-Channel Power MOSFET
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs a...
