IRF9530, RF1S9530SM
Data Sheet July 1999 File Number
2221.4
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MO...
