PD - 91811
IRFB9N60A
HEXFET® Power MOSFET
l l l l l
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements
D
VDSS = 600V
G S
RDS(on) = 0.75Ω ID = 9.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device ...
