30A TO-22OF15. YG808C10R Datasheet

YG808C10R Datasheet PDF, Equivalent


Part Number

YG808C10R

Description

SCHOTTKY BARRIER DIODE(100V / 30A TO-22OF15)

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
Download YG808C10R Datasheet PDF


YG808C10R Datasheet
YG808C10R
SCHOTTKY BARRIER DIODE
(100V / 30A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
100 V
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=80°C
Square wave
Sine wave 10ms
100
1500
30*
180
V
V
A
A
Operating junction temperature
Tj
+150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=10A
0.80 V
Reverse current **
IR VR=VRRM
20.0 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
2.0 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

YG808C10R Datasheet
(100V / 30A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10 Tj=150 oC
Tj=125 oC
Tj=100 oC
Tj=25 oC
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF Forward Voltage (V)
Forward Power Dissipation
28
26
Io
24
22 λ
20 360°
18
16 Square wave λ=60o
14
Square wave λ=120o
Sine wave λ=180o
12 Square wave λ=180o
DC
10
8
6
4
2
Per 1element
0
0 2 4 6 8 10 12 14
Io Average Forward Current (A)
16
Current Derating (Io-Tc)
160
150
140
130
120
110
100 DC
90
80
Sine wave λ=180o
Square wave λ=180o
70
60
50
40 360°
λ
30 Io
20 VR=50V
Square wave λ=120o
Square wave λ=60o
10
0
0 5 10 15 20 25 30 35 40
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
45
YG808C10R
Reverse Characteristic (typ.)
103
102
101
Tj=150oC
Tj=125oC
Tj=100oC
100
Tj=25oC
10-1
10-2
0
10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Reverse Power Dissipation
50
45
360°
40
VR
35
α
30
DC
25
20
15 α=180o
10
5
0
0 10 20 30 40 50 60 70 80 90 100 110
VR Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
1000
100
10
1
10 100
VR Reverse Voltage (V)
1000


Features Datasheet pdf YG808C10R SCHOTTKY BARRIER DIODE (100V / 30A TO-22OF15) Outline Drawings 10±0 .5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6 .3 2.7±0.2 3.7±0.2 1.2±0.2 13Min Features Low VF Super high speed switch ing. High reliability by planer design. 15±0.3 0.7±0.2 2.54±0.2 0.6 -0 +0.2 2.7±0.2 JEDEC EIAJ SC-67 Appl ications High speed power switching. C onnection Diagram 2 1 3 Maximum Rating s and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse vo ltage Repetitive peak surge reverse vol tage Isolation voltage Average output c urrent Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Viso IO IFSM Tj Tstg tw=500n s, duty=1/40 Terminals to Case, AC. 1mi n. duty=1/2, Tc=80°C Square wave Sine wave 10ms Conditions Rating 100 100 15 00 30* 180 +150 -40 to +150 Unit V V V A A °C °C Electrical Characteristic s (Ta=25°C Unless otherwise specified ) Item Forward voltage drop ** Reverse current ** Thermal resistance Symbol VF IR Rth(j-c) Conditions IF=10A VR=VRRM .
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