SPEED DIODE. YG911S2R Datasheet

YG911S2R Datasheet PDF, Equivalent


Part Number

YG911S2R

Description

LOW LOSS SUPER HIGH SPEED DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
Download YG911S2R Datasheet PDF


YG911S2R Datasheet
YG911S2R
(200V / 5A TO-22OF15)
LOW LOSS SUPER HIGH SPEED DIODE
Outline Drawings
10.5±0.5
ø3.2
+0.2
-0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
0.7±0.2
5.08±0.4
JEDEC
EIAJ
SC-67
0.6±0.2
2.7±0.2
Connection Diagram
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Symbol
Conditions
1
Rating
3
Unit
Repetitive peak reverse voltage
VRRM
200 V
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
Terminals to Case,
AC. 1min.
duty=1/2, Tc=134°C
Rectangl wave
Sine wave 10ms
200
1500
5
50
V
V
A
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
-40 to +150
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VF IF=5.0A
Reverse current
IR VR=VRRM
Reverse recovery time
trr IF=0.1A,IR=0.2A,Irec=0.05A
Thermal resistance
Rth(j-c)
Junction to case
Max.
0.95
100
35
5.0
Unit
V
µA
ns
°C/W
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

YG911S2R Datasheet
(200V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150 oC
Tj=125 oC
Tj=100 oC
Tj=25 oC
1
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF Forward Voltage (V)
Forward Power Dissipation
6
Io
5λ
360°
4 Square wave λ=60 o
Square wave λ=120 o
Sine wave λ=180 o
3 Square wave λ=180 o
DC
2
1
Per 1element
0
012345
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
150
A-169
140
130
360°
λ
Io
VR=200V
DC
SSSiqqnuueaawrreeawwveaavvλee=1λλ8==011o2800oo
Square wave λ=60o
120
0
1234567
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
8
YG911S2R
Reverse Characteristic (typ.)
104
Tj=150 oC
103 Tj=125 oC
Tj=100 oC
102
101
Tj= 25 oC
100
10-1
0
50 100 150 200
VR Reverse Voltage (V)
Reverse Power Dissipation
1.3
1.2
360°
1.1
1.0 VR
0.9 α
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
50 100 150
VR Reverse Voltage (V)
DC
α=180 o
200
Junction Capacitance Characteristic
(typ.)
100
10
1
1 10 100
VR Reverse Voltage (V)


Features Datasheet pdf YG911S2R LOW LOSS SUPER HIGH SPEED DIODE (200V / 5A TO-22OF15) Outline Drawing s 10.5±0.5 ø3.2 -0.1 +0.2 4.5±0.2 2 .7±0.2 6.3 2.7±0.2 3.7±0.2 1.2±0. 2 13Min 0.7±0.2 Features Low VF Super high speed switching. High reliability by planer design. 5.08±0.4 15±0.3 0.6±0.2 2.7±0.2 Applications High sp eed power switching. JEDEC EIAJ SC-67 Connection Diagram 1 3 Maximum Ratin gs and Characteristics Absolute Maximum Ratings Item Repetitive peak reverse v oltage Repetitive peak surge reverse vo ltage Isolation voltage Average output current Surge current Operating junctio n temperature Storage temperature Symbo l VRRM VRSM Viso IO IFSM Tj Tstg Condit ions Rating 200 200 Unit V V V A A ° C °C Terminals to Case, AC. 1min. dut y=1/2, Tc=134°C Rectangl wave Sine wav e 10ms 1500 5 50 -40 to +150 -40 to +1 50 Electrical Characteristics (Ta=25° C Unless otherwise specified ) Item For ward voltage drop Reverse current Rever se recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions IF=5.0.
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