SPEED DIODE. YG912S2R Datasheet

YG912S2R Datasheet PDF, Equivalent


Part Number

YG912S2R

Description

LOW LOSS SUPER HIGH SPEED DIODE

Manufacture

Fuji Electric

Total Page 3 Pages
PDF Download
Download YG912S2R Datasheet PDF


YG912S2R Datasheet
YG912S2R
(200V / 10A TO-22OF15)
LOW LOSS SUPER HIGH SPEED DIODE
Outline Drawings
10.5±0.5
ø3.2
+0.2
-0.1
4.5±0.2
2.7±0.2
1.2±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
0.7±0.2
5.08±0.4
JEDEC
EIAJ
SC-67
0.6±0.2
2.7±0.2
Connection Diagram
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Symbol
Conditions
1
Rating
3
Unit
Repetitive peak reverse voltage
VRRM
200 V
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
Terminals to Case,
AC. 1min.
duty=1/2, Tc=116°C
Rectangl wave
Sine wave 10ms
200
1500
10
80
V
V
A
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
-40 to +150
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VF IF=10A
Reverse current
IR VR=VRRM
Reverse recovery time
trr IF=0.1A,IR=0.2A,Irec=0.05A
Thermal resistance
Rth(j-c)
Junction to case
Max.
0.98
200
35
3.5
Unit
V
µA
ns
°C/W
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g

YG912S2R Datasheet
(200V / 10A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
1
0.1
Tj=150o C
Tj=125o C
Tj=100o C
Tj=25o C
0.01
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VF Forward Voltage (V)
Forward Power Dissipation
14
Io
12
λ
10 360°
8 Square wave λ=60o
Square wave λ=120o
Sine wave λ=180o
6 Square wave λ=180o
DC
4
2
Per 1element
0
0 1 2 3 4 5 6 7 8 9 10
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
155
150
145
140
135
130
125
120
115
110
105
100
0
360°
λ
Io
VR=200V
DC
Square wave λ=180o
Sine wave λ=180o
Square wave λ=120o
Square wave λ=60o
2 4 6 8 10 12 14 16
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
YG912S2R
Reverse Characteristic
10 4
10 3
(typ.)
Tj=150 oC
Tj=125 oC
Tj=100 oC
10 2
10 1
Tj= 25 oC
10 0
10 -1
0
50 100 150 200
VR Reverse Voltage (V)
250
Reverse Power Dissipation
2.0
1.8 360°
DC
1.6 VR
1.4 α
1.2
1.0
0.8 α=180 o
0.6
0.4
0.2
0.0
0
25 50
VR
75 100 125 150 175 200 225
Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
100
10
1
1 10 100
VR Reverse Voltage (V)
A-178


Features Datasheet pdf YG912S2R LOW LOSS SUPER HIGH SPEED DIODE (200V / 10A TO-22OF15) Outline Drawin gs 10.5±0.5 ø3.2 -0.1 +0.2 4.5±0.2 2.7±0.2 6.3 2.7±0.2 3.7±0.2 1.2±0 .2 13Min 0.7±0.2 Features Low VF Supe r high speed switching. High reliabilit y by planer design. 5.08±0.4 15±0.3 0.6±0.2 2.7±0.2 Applications High s peed power switching. JEDEC EIAJ SC-6 7 Connection Diagram 1 3 Maximum Rati ngs and Characteristics Absolute Maximu m Ratings Item Repetitive peak reverse voltage Repetitive peak surge reverse v oltage Isolation voltage Average output current Surge current Operating juncti on temperature Storage temperature Symb ol VRRM VRSM Viso IO IFSM Tj Tstg Termi nals to Case, AC. 1min. duty=1/2, Tc=11 6°C Rectangl wave Sine wave 10ms Condi tions Rating 200 200 1500 10 80 -40 to +150 -40 to +150 Unit V V V A A °C °C Electrical Characteristics (Ta=25°C Unless otherwise specified ) Item Forwa rd voltage drop Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions IF=10A V.
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