X2816C E2PROM Datasheet

X2816C Datasheet, PDF, Equivalent


Part Number

X2816C

Description

5 Volt/ Byte Alterable E2PROM

Manufacture

Xicor

Total Page 16 Pages
Datasheet
Download X2816C Datasheet


X2816C
X2816C
16K
X2816C
2048 x 8 Bit
5 Volt, Byte Alterable E2PROM
FEATURES
90ns Access Time
Simple Byte and Page Write
—Single 5V Supply
—No External High Voltages or VPP Control
Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
High Performance Advanced NMOS Technology
Fast Write Cycle Times
—16 Byte Page Write Operation
—Byte or Page Write Cycle: 5ms Typical
—Complete Memory Rewrite: 640ms Typical
—Effective Byte Write Cycle Time: 300µs
Typical
DATA Polling
—Allows User to Minimize Write Cycle Time
JEDEC Approved Byte-Wide Pinout
High Reliability
—Endurance: 10,000 Cycles
—Data Retention: 100 Years
DESCRIPTION
The Xicor X2816C is a 2K x 8 E2PROM, fabricated with
an advanced, high performance N-channel floating gate
MOS technology. Like all Xicor Programmable nonvola-
tile memories it is a 5V only device. The X2816C
features the JEDEC approved pinout for byte-wide
memories, compatible with industry standard RAMs,
ROMs and EPROMs.
The X2816C supports a 16-byte page write operation,
typically providing a 300µs/byte write cycle, enabling the
entire memory to be written in less than 640ms. The
X2816C also features DATA Polling, a system software
support scheme used to indicate the early completion of
a write cycle.
Xicor E2PROMs are designed and tested for applica-
tions requiring extended endurance. Inherent data re-
tention is greater than 100 years.
PIN CONFIGURATION
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
PLASTIC DIP
SOIC
1 24
2 23
3 22
4 21
5 20
6 19
X2816C
7 18
8 17
9 16
10 15
11 14
12 13
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
3852 FHD F02.1
LCC
PLCC
4 3 2 1 32 31 30
A6 5
29 A8
A5 6
28 A9
A4 7
27 NC
A3 8
A2 9
X2816C
26 NC
25 OE
A1 10
24 A10
A0 11
23 CE
NC 12
22 I/O7
I/O0
13 21
14 15 16 17 18 19 20
I/O6
3852 FHD F03
©Xicor, 1995 Patents Pending
3852-1.4 3/27/96 T2/C3/D5 NS
Characteristics subject to change without notice
1

X2816C
X2816C
PIN DESCRIPTIONS
Addresses (A0–A10)
The Address inputs select an 8-bit memory location
during a read or write operation.
Chip Enable (CE)
The Chip Enable input must be LOW to enable all
read/write operations. When CE is HIGH, power con-
sumption is reduced.
Output Enable (OE)
The Output Enable input controls the data output buffers
and is used to initiate read operations.
PIN NAMES
Symbol
A0–A10
I/O0–I/O7
WE
CE
OE
VCC
VSS
NC
Description
Address Inputs
Data Input/Output
Write Enable
Chip Enable
Output Enable
+5V
Ground
No Connect
3852 PGM T01
FUNCTIONAL DIAGRAM
A0–A10
ADDRESS
INPUTS
X BUFFERS
LATCHES AND
DECODER
Y BUFFERS
LATCHES AND
DECODER
16,384-BIT
E2PROM
ARRAY
I/O BUFFERS
AND LATCHES
CE
OE
WE
VCC
VSS
CONTROL
LOGIC
I/O0–I/O7
DATA INPUTS/OUTPUTS
3852 FHD F01
2


Features X2816C 16K X2816C 5 Volt, Byte Alterabl e E2PROM DESCRIPTION 2048 x 8 Bit FEA TURES • • • • • • • 9 0ns Access Time Simple Byte and Page Wr ite —Single 5V Supply —No External High Voltages or VPP Control Circuits Self-Timed —No Erase Before Write No Complex Programming Algorithms — No Overerase Problem High Performance A dvanced NMOS Technology Fast Write Cycl e Times —16 Byte Page Write Operation —Byte or Page Write Cycle: 5ms Typic al —Complete Memory Rewrite: 640ms Ty pical —Effective Byte Write Cycle Tim e: 300µs Typical DATA Polling —Allow s User to Minimize Write Cycle Time JED EC Approved Byte-Wide Pinout High Relia bility —Endurance: 10,000 Cycles —D ata Retention: 100 Years The Xicor X28 16C is a 2K x 8 E2PROM, fabricated with an advanced, high performance N-channe l floating gate MOS technology. Like al l Xicor Programmable nonvolatile memori es it is a 5V only device. The X2816C f eatures the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs, ROMs a.
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