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VN2450

Supertex Inc
Part Number VN2450
Manufacturer Supertex Inc
Description N-Channel Vertical DMOS FETs
Published Apr 16, 2005
Detailed Description VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features ► Free from secondary breakdown ► Low input and output l...
Datasheet PDF File VN2450 PDF File

VN2450
VN2450


Overview
VN2450 N-Channel Enhancement-Mode Vertical DMOS FETs Features ► Free from secondary breakdown ► Low input and output leakage ► Low CISS and fast switching speeds ► High input impedance and high gain Applications ► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.
) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Ordering Information Device Package Options TO-92 TO-243AA (SOT-89) BVDSS/BVDGS (V) VN2450 VN2450N3-G VN2450N8-G 500 -G indicates package is RoHS compliant (‘Green’) Pin Configurations RDS(ON) (max) (Ω) 13 ID(ON) (min) (mA) 500 DRAIN DRAIN Absolute Maximum Ratings Parameter Value Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage BVDSS BVDGS ±20V Operating and storage temperature -55°C to +150°C Soldering temperature* +300°C Absolute Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect device reliability.
All voltages are referenced to device ground.
* Distance of 1.
6mm from case for 10 seconds.
SOURCE GATE TO-92 (N3) SOURCE DRAIN GATE TO-243AA (SOT-89) (N8) Product Marking SiVN YY = Year Sealed 2 4 ...


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