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VHB10-12F

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR


Description
VHB10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: Omnigold™ Metalization System MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC O C D F E H I 2.0 A 36 V 18 V 36 V 4.0 V 20 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 8.8 ...



Advanced Semiconductor

VHB10-12F

PDF File VHB10-12F PDF File


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