Case. TSTS7100 Datasheet

TSTS7100 Datasheet PDF


Part

TSTS7100

Description

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Manufacture

Vishay Telefunken

Page 5 Pages
Datasheet
Download TSTS7100 Datasheet


TSTS7100 Datasheet
TSTS710.
Vishay Telefunken
GaAs IR Emitting Diodes in Hermetically Sealed TO18
Case
Description
TSTS710. series are infrared emitting diodes in stan-
dard GaAs technology in a hermetically sealed TO–18
package. Their glass lenses provide a very high ra-
diant intensity without external optics.
Features
D Very high radiant intensity
D Suitable for pulse operation
D Narrow angle of half intensity ϕ = ± 5°
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Radiation source in near infrared range
94 8483
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction/Ambient
Thermal Resistance Junction/Case
Test Conditions
xTcase 25 °C
xtp/T = 0.5, tp 100 ms,
xTcase 25 °C
xtp 100 ms
xTcase 25 °C
Symbol
VR
IF
IFM
IFSM
PV
PV
Tj
Tstg
RthJA
RthJC
Value
5
250
500
2.5
170
500
100
–55...+100
450
150
Unit
V
mA
mA
A
mW
mW
°C
°C
K/W
K/W
Document Number 81047
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
1 (5)

TSTS7100 Datasheet
TSTS710.
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Breakdown Voltage
Junction Capacitance
Radiant Power
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Rise Time
Fall Time
xTest Conditions
IF = 100 mA, tp 20 ms
IR = 100 mA
Symbol
VF
V(BR)
Min
5
Typ Max Unit
1.3 1.7 V
V
xVR = 0 V, f = 1 MHz, E = 0
IF = 100 mA, tp 20 ms
Cj
fe
30 pF
7 mW
IF = 100 mA
TKfe
–0.8
%/K
ϕ ±5 deg
IF = 100 mA
IF = 100 mA
lp 950 nm
Dl 50 nm
xIF
tp
=
1.5
10
A,
ms
tp/T
=
0.01,
tr
400 ns
xIF
tp
=
1.5
10
A,
ms
tp/T
=
0.01,
tf
400 ns
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Radiant Intensity
Test Conditions
Type
Symbol Min Typ Max Unit
IF=100mA, tp=20ms
TSTS7100
TSTS7101
TSTS7102
TSTS7103
Ie 10
Ie 12.5
Ie 20
Ie 32
mW/sr
25 mW/sr
40 mW/sr
64 mW/sr
Typical Characteristics (Tamb = 25_C unless otherwise specified)
600
RthJC
500
300
250
400
300
200
RthJA
100
200
150
RthJA
100
50
RthJC
0
0
94 8017 e
25 50 75 100 125
Tamb – Ambient Temperature ( °C )
Figure 1. Power Dissipation vs. Ambient Temperature
0
0
94 8018 e
20 40 60 80 100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (5)
Document Number 81047
Rev. 2, 20-May-99


Features Datasheet pdf TSTS710. Vishay Telefunken GaAs IR Emit ting Diodes in Hermetically Sealed TO18 Case Description TSTS710. series are i nfrared emitting diodes in standard GaA s technology in a hermetically sealed T O–18 package. Their glass lenses prov ide a very high radiant intensity witho ut external optics. Features D D D D D D Very high radiant intensity Suitable for pulse operation Narrow angle of ha lf intensity ϕ = ± 5° Peak wavelengt h lp = 950 nm High reliability Good spe ctral matching to Si photodetectors 94 8483 Applications Radiation source in near infrared range Absolute Maximum R atings Tamb = 25_C Parameter Reverse Vo ltage Forward Current Peak Forward Curr ent Surge Forward Current Power Dissipa tion Junction Temperature Storage Tempe rature Range Thermal Resistance Junctio n/Ambient Thermal Resistance Junction/C ase Test Conditions Tcase 25 °C tp/T = 0.5, tp 100 ms, Tcase 25 °C tp 100 ms Symbol VR IF IFM IFSM PV PV Tj Tstg Rt hJA RthJC Value 5 250 500 2.5 170 500 100 –55...+100 450 150 Unit V mA.
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