(PDF) TSUS540 Datasheet PDF | Vishay Telefunken





TSUS540 Datasheet PDF

Part Number TSUS540
Description GaAs Infrared Emitting Diodes in 5 mm (T-13/4)Package
Manufacture Vishay Telefunken
Total Page 6 Pages
PDF Download Download TSUS540 Datasheet PDF

Features: Datasheet pdf ( DataSheet : www.DataSheet4U.com ) TSU S540. Vishay Telefunken GaAs Infrared Emitting Diodes in ø 5 mm (T–1¾ ) P ackage Description TSUS540. series are infrared emitting diodes in standard Ga As on GaAs technology, molded in a clea r, blue–grey tinted plastic package. The devices are spectrally matched to s ilicon photodiodes and phototransistors . 94 8390 Features D Low cost emitter D Low forward voltage D High radiant po wer and radiant intensity D Suitable fo r DC and high pulse current operation D Standard T–1¾ (ø 5 mm) package D C omfortable angle of half intensity ϕ = ± 22° D Peak wavelength l p = 950 nm D High reliability D Good spectral mat ching to Si photodetectors Application s Infrared remote control and free air transmission systems with low forward v oltage and comfortable radiation angle requirements in combination with PIN ph otodiodes or phototransistors. Absolut e Maximum Ratings Tamb = 25_ C Paramete r Reverse Voltage Forward Current Peak Forward Current Surge Forward Current.

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TSUS540 datasheet
( DataSheet : www.DataSheet4U.com )
TSUS540.
Vishay Telefunken
GaAs Infrared Emitting Diodes in ø 5 mm (T–1¾ )
Package
Description
TSUS540. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a clear,
blue–grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and photo-
transistors.
94 8390
Features
D Low cost emitter
D Low forward voltage
D High radiant power and radiant intensity
D Suitable for DC and high pulse current operation
D Standard T–1¾ (ø 5 mm) package
D Comfortable angle of half intensity ϕ = ± 22°
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation
angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings
Tamb = 25_ C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
tp/T = 0.5, tp = 100 m s
tp = 100 m s
xt 5sec, 2 mm from case
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
150
300
2.5
210
100
–55...+100
–55...+100
260
375
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81056
Rev. 2, 20-May-99
www.DataSheet4U.com
www.vishay.de FaxBack +1-408-970-5600
1 (6)

TSUS540 datasheet
TSUS540.
Vishay Telefunken
Basic Characteristics
Tamb = 25_ C
Parameter
Forward Voltage
Temp. Coefficient of VF
Reverse Current
Junction Capacitance
Temp. Coefficient of f e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of lp
Rise Time
Fall Time
Test Conditions
IF = 100 mA, tp = 20 ms
IF = 100mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
Symbol
VF
TKVF
IR
Cj
TKf e
ϕ
lp
Dl
TKl p
tr
tr
tf
tf
Min
Typ Max Unit
1.3 1.7 V
–1.3 mV/K
100 m A
30 pF
–0.8 %/K
±22 deg
950 nm
50 nm
0.2 nm/K
800 ns
400 ns
800 ns
400 ns
Type Dedicated Characteristics
Tamb = 25_ C
Parameter
Forward Voltage
Radiant Intensity
Radiant Power
Test Conditions
Type
Symbol Min Typ Max Unit
IF=1.5A, tp=100m s TSUS5400/5401 VF
2.2 3.4
V
TSUS5402
VF
2.2 2.7
V
IF=100mA,
tp=20ms
TSUS5400
TSUS5401
Ie 7 14
Ie 10 17
mW/sr
mW/sr
IF=1.5A, tp=100m s
TSUS5402
TSUS5400
Ie 15 20
Ie 60 140
mW/sr
mW/sr
TSUS5401
Ie 85 160
mW/sr
IF=100mA,
tp=20ms
TSUS5402
TSUS5400
TSUS5401
TSUS5402
Ie 120 190
f e 13
f e 14
f e 15
mW/sr
mW
mW
mW
www.vishay.de FaxBack +1-408-970-5600
2 (6)
Document Number 81056
Rev. 2, 20-May-99




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