Package. TSUS5400 Datasheet

TSUS5400 Datasheet PDF


Part

TSUS5400

Description

GaAs Infrared Emitting Diodes in 5 mm (T1) Package

Manufacture

Vishay Siliconix

Page 6 Pages
Datasheet
Download TSUS5400 Datasheet


TSUS5400 Datasheet
TSUS540.
Vishay Telefunken
¾GaAs Infrared Emitting Diodes in ø 5 mm (T–1 )
Package
Description
TSUS540. series are infrared emitting diodes in stan-
dard GaAs on GaAs technology, molded in a clear,
blue–grey tinted plastic package. The devices are
spectrally matched to silicon photodiodes and photo-
transistors.
94 8390
Features
D Low cost emitter
D Low forward voltage
D High radiant power and radiant intensity
D Suitable for DC and high pulse current operation
D Standard T–1¾ (ø 5 mm) package
D Comfortable angle of half intensity ϕ = ± 22°
D Peak wavelength lp = 950 nm
D High reliability
D Good spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with low forward voltage and comfortable radiation
angle requirements in combination with PIN photodiodes or phototransistors.
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
tp/T = 0.5, tp = 100 ms
tp = 100 ms
xt 5sec, 2 mm from case
Symbol
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
Value
5
150
300
2.5
210
100
–55...+100
–55...+100
260
375
Unit
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number 81056
Rev. 2, 20-May-99
www.vishay.com
1 (6)

TSUS5400 Datasheet
TSUS540.
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Temp. Coefficient of VF
Reverse Current
Junction Capacitance
Temp. Coefficient of fe
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of lp
Rise Time
Fall Time
Test Conditions
IF = 100 mA, tp = 20 ms
IF = 100mA
VR = 5 V
VR = 0 V, f = 1 MHz, E = 0
IF = 20 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 100 mA
IF = 1.5 A
IF = 100 mA
IF = 1.5 A
Symbol
VF
TKVF
IR
Cj
TKfe
ϕ
lp
Dl
TKlp
tr
tr
tf
tf
Min
Typ Max Unit
1.3 1.7 V
–1.3 mV/K
100 mA
30 pF
–0.8 %/K
±22 deg
950 nm
50 nm
0.2 nm/K
800 ns
400 ns
800 ns
400 ns
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Forward Voltage
Radiant Intensity
Radiant Power
Test Conditions
Type
Symbol Min Typ Max Unit
IF=1.5A, tp=100ms TSUS5400/5401 VF
2.2 3.4
V
TSUS5402
VF
2.2 2.7
V
IF=100mA,
tp=20ms
TSUS5400
TSUS5401
Ie 7 14
Ie 10 17
mW/sr
mW/sr
IF=1.5A, tp=100ms
TSUS5402
TSUS5400
Ie 15 20
Ie 60 140
mW/sr
mW/sr
TSUS5401
Ie 85 160
mW/sr
IF=100mA,
tp=20ms
TSUS5402
TSUS5400
TSUS5401
TSUS5402
Ie 120 190
fe 13
fe 14
fe 15
mW/sr
mW
mW
mW
www.vishay.com
2 (6)
Document Number 81056
Rev. 2, 20-May-99


Features Datasheet pdf TSUS540. Vishay Telefunken GaAs Infrare d Emitting Diodes in ø 5 mm (T–1¾) Package Description TSUS540. series are infrared emitting diodes in standard G aAs on GaAs technology, molded in a cle ar, blue–grey tinted plastic package. The devices are spectrally matched to silicon photodiodes and phototransistor s. 94 8390 Features D D D D D D D D D Low cost emitter Low forward voltage Hi gh radiant power and radiant intensity Suitable for DC and high pulse current operation Standard T–1¾ (ø 5 mm) pa ckage Comfortable angle of half intensi ty ϕ = ± 22° Peak wavelength lp = 95 0 nm High reliability Good spectral mat ching to Si photodetectors Application s Infrared remote control and free air transmission systems with low forward v oltage and comfortable radiation angle requirements in combination with PIN ph otodiodes or phototransistors. Absolut e Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak F orward Current Surge Forward Current Power Dissipation Junction Temperature .
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