TPV596A POWER TRANSISTOR Datasheet

TPV596A Datasheet, PDF, Equivalent


Part Number

TPV596A

Description

UHF LINEAR POWER TRANSISTOR

Manufacture

Motorola Inc

Total Page 4 Pages
Datasheet
Download TPV596A Datasheet


TPV596A
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Linear Power Transistor
. . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and
500 mW Band V TV transposer stages. Gold metallization and diffused emitter
ballast resistors are used to enhanced reliability, ruggedness and linearity.
Band IV and V (470– 860 MHz)
0.5 W — Pref @ – 58 dB IMD
High Gain — 12 dB Typ, Class A, f = 860 MHz
Gold Metallization for Reliability
Order this document
by TPV596A/D
TPV596A
0.5 W, 470 – 860 MHz
UHF LINEAR
POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
TJ
Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mA, IB = 0)
Collector–Base Breakdown Voltage
(IC = 1.0 mA, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 4.0 mA, IC = 0)
Emitter–Base Leakage Current
(VEB = 2.0 V)
Collector Cutoff Current
(VCB = 28 V, IE = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mA, RBE = 10 )
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, IE = 0, f = 1.0 MHz)
Value
24
45
3.5
0.7
8.75
0.05
200
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C
Symbol
RθJC
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
ICBO
V(BR)CER
24
45
3.5
50
hFE 15
Cob —
CASE 244–04, STYLE 1
(.280 SOE)
Max
20
Typ Max
——
——
——
— 0.25
— 1.0
——
Unit
°C/W
Unit
Vdc
Vdc
Vdc
mA
mAdc
Vdc
— 120 —
— 5.0 pF
(continued)
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
TPV596A
1

TPV596A
ELECTRICAL CHARACTERISTICS — continued
Characteristic
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCE = 20 V, Pout = 0.5 W, f = 860 MHz, IE = 0.22 A)
Load Mismatch
(VCE = 20 V, Pout = 1.0 W, IE = 0.22 A, f = 860 MHz,
Load VSWR = :1, All Phase Angles)
Intermodulation Distortion, 3 Tone
(f = 860 MHz, VCE = 20 V, IE = 0.22 A, Pref = 1.0 W,
Vision Carrier = – 8.0 dB, Sound Carrier = –7.0 dB,
Sideband Signal = –16 dB, Specification TV05001)
Intermodulation Distortion (IDEM)
(f = 860 MHz, VCE = 20 V, IE = 0.22 A, Pref = 0.5 W,
Vision Carrier = – 8.0 dB, Sound Carrier = –10 dB,
Sideband Signal = –16 dB)
Symbol
GPE
ψ
IMD1
Min Typ Max Unit
11.5 12 — dB
No Degradation in Output Power
— — – 50 dB
IMD2
ā60
ā58
dB
TYPICAL CHARACTERISTICS
3
IDEAL
2.5
REAL
2
1.5
f = 860 MHz
1 VCE = 20 V
IC = 220 mA
0.5
0
20 40 60 80 100 120 140
Pin, INPUT POWER (mW)
0
0.4
0.2
0.4
0.6
0.1
0.2 0.8
0.2
f = 1 GH0z.4
Zin
0.6 0.4 0.6
f = 1 GHz 0.6
0.8 0.8 ZOL* 0.8
0.8
1
0.6
1 Zo = 50
1
0.4 1.5
2
1.5
2
3
45
10
3
4
5
10
0 10
3
54
1.5
2
Figure 1. Power Output versus Power Input
Figure 2. Large Signal Impedances
VCE = 20 V — IC = 220 mA
ZOL* = Conjugate of the optimum load impedance into which the
device output operates at a given output power, voltage and
frequency.
1
8
THEATSINK = 70°C
0.1 6
0.01 NOTE: DIVIDE MTTF BY IC2 TO
NOTE: OBTAIN METAL LIFE
0.001
80
100 120 140 160 180
TJ, JUNCTION TEMPERATURE (°C)
200
Figure 3. MTTF Factor versus Junction
Temperature
4
2
4 8 12 16 20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
24
TPV596A
2
MOTOROLA RF DEVICE DATA


Features MOTOROLA The RF Line SEMICONDUCTOR TECH NICAL DATA Order this document by TPV5 96A/D UHF Linear Power Transistor . . . designed for very high output 1.5 V M ATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold meta llization and diffused emitter ballast resistors are used to enhanced reliabil ity, ruggedness and linearity. • Band IV and V (470– 860 MHz) • 0.5 W Pref @ – 58 dB IMD • High Gain 12 dB Typ, Class A, f = 860 MHz • G old Metallization for Reliability TPV5 96A 0.5 W, 470 – 860 MHz UHF LINEAR P OWER TRANSISTOR MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector Base Voltage Emitter–Base Voltage C ollector Current — Continuous Total D evice Dissipation @ TC = 25°C Derate a bove 25°C Operating Junction Temperatu re Storage Temperature Range Symbol VCE O VCBO VEBO IC PD TJ Tstg Value 24 45 3 .5 0.7 8.75 0.05 200 – 65 to + 200 Un it Vdc Vdc Vdc Adc Watts W/°C °C °C CASE 244–04, STYLE 1 (.280 SOE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junc.
Keywords TPV596A, datasheet, pdf, Motorola Inc, UHF, LINEAR, POWER, TRANSISTOR, PV596A, V596A, 596A, TPV596, TPV59, TPV5, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)